2SJ291
Silicon P-Channel MOS FET
November 1996
www.DataSheet4U.com
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Fla...
