J291

2SJ291 Silicon P-Channel MOS FET November 1996 www.DataSheet4U.com Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SJ291 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current www.DataSheet4U.com Avalanche current Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings –60 ±20 –20 –80 –20 –20 Unit V V A A A A mJ W °C °C Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω EAR* Tch 3 34 2 Pch* 60 150 –55 to +150 Tstg 2 2SJ291 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current www.DataSheet4U.com Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) –60 ±20 — — –1.0 — — Typ — — — — — 0.05 0.07 16 2200 1000 300 25 130 320 210 –1.1 160 Max — — ±10 –250 –2.25 0.065 0.095 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns Test conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –50 V, VGS = 0 ID = –1 mA, VDS = –10 V ID = –10 A, VGS = –10 V* ID = –10 A, VGS =...