2SK3506
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3506
Relay Drive and DC-DC Converter App...
2SK3506
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3506
Relay Drive and DC-DC Converter Applications Motor Drive Applications
Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Unit: mm
Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) www.DataSheet4U.com Enhancement model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 45 135 100 220 45 10 150 −55 to150 Unit V V V A W mJ A mJ °C °C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― SC-65 2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. ...