MS2422

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2422 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features www.DataSheet4U.com DESIGNED FOR HIGH POWER PULSED IFF, DME, AND TACAN APPLICATIONS 350 W (typ.) IFF 1030 – 1090 MHz 300 W (min.) DME 1025 – 1150 MHz 290 W (typ.) TACAN 960 – 1215 MHz 960 – 1215 MHz GOLD METALLIZATION POUT = 300W MINIMUM GP = 6.3 dB MINIMUM INFINITE VSWR CAPABILITY @ RATED CONDITIONS EMITTER BALLASTED COMMON BASE DESCRIPTION: The MS2422 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME, and TACAN. The MS2422 is designed with internal input/output matching resulting in improved broadband performance and low thermal resistance. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCES VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 65 3.5 22 875 200 -65 to +150 Unit V V V A W ºC ºC Thermal Data RTH(J-C) Junction-case Thermal Resistance 0.20 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2422 STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) Test Conditions IC = 10 mA IC = 25 mA IE = 5.0 mA V...