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RU4AM

Galaxy Semi-Conductor

HIGH EFFICIENCY RECTIFIER

BL FEATURES GALAXY ELECTRICAL RU4M(Z) --- RU4AM(Z) VOLTAGE RANGE: 400 --- 600 V CURRENT: 3.5 A HIGH EFFICIENCY RECT I...


Galaxy Semi-Conductor

RU4AM

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Description
BL FEATURES GALAXY ELECTRICAL RU4M(Z) --- RU4AM(Z) VOLTAGE RANGE: 400 --- 600 V CURRENT: 3.5 A HIGH EFFICIENCY RECT IFIER Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, alcohol, ls opropand and s im ilar s olvents The plas tic m aterial carries U/L recognition 94V-0 DO - 27 MECHANICAL DATA Cas e: JEDEC DO-27, m olded plas tic Term inals : Axial leads ,s olderable per www.DataSheet4U.com MIL-STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041ounces ,1.15 gram s Mounting: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. RU4M Maximum peak repetitive reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average f orw ard rectif ied current 9.5mm lead length, Peak f orw ard surge current 10ms single half -sine-w ave superimplsed on rated load @TJ =125 Maximum instantaneous f orw ard voltage @ 3.5A Maximum reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance Typical thermal resistance Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F =0.5A, I R=1A, Irr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance junction to am bient. RU4AM 600 420 600 3.5 UNITS V V V A V RRM V RMS V ...




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