SII145S12

SII145S12 SPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A V o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < o 190(135) 380(270) _ +20 _ 40...+150(125) 4000 130(90) 380(270) 1100 130(90) 350(260) 1100 C AC, 1min Visol Inverse Diode IF = -IC IFRM V A A A A A A TC= 25(80)oC TC= 25(80)oC, tP =1ms IFSM tP =10ms; sin.;Tj=150oC Freewheeling diode TC= 25(80)oC IF = -IC IFRM TC= 25(80)oC, tP =1ms IFSM tP =10ms; sin.;Tj=150oC SII145S12 SPT IGBT Modules Characteristics Symbol Conditions IGBT VGE(th) VGE = VCE, IC =2mA ICES VGE = 0; VCE = VCES; Tj = 25(125)oC VCE(TO) Tj = 25(125)oC rCE VGE = 15V, Tj = 25(125)oC VCE(sat) IC =100A; VGE = 15V; chip level Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres www.DataSheet4U.com LCE RCC'+EE' res., terminal-chip TC = 25(125)oC under following conditions: td(on) VCC = 600V, IC = 100A tr RGon = RGoff = 9 , Tj = 125oC td(off) VGE = ± 15V tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 100A; Tj = 125oC Qrr di/dt = 3500A/us Err VGE = V FWD under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 100A; Tj = 25(125)oC Qrr di/dt = A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(...