A1726 Datasheet: 2SA1726





A1726 Datasheet PDF Download

Part Number A1726
Description 2SA1726
Manufacture Allegro Micro Systems
Total Page 1 Pages
PDF Download Download A1726 Datasheet PDF

Features: 2SA1726 Silicon PNP Epitaxial Planar Tra nsistor (Complement to type 2SC4512) sA bsolute maximum ratings (Ta=25°C) Symb ol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1 726 –80 –80 –6 –6 –3 50(Tc=25 °C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and Gener al Purpose (Ta=25°C) 2SA1726 –10max –10max –80min 50min∗ –0.5max 20 typ 150typ V pF 12.0min 4.0max sElectr ical Characteristics Symbol ICBO IEBO V (BR)CEO hFE VCE(sat) fT COB Conditions VCB=–80V VEB=–6V IC=–25mA VCE=– 4V, IC=–2A IC=–2A, IB=–0.2A VCE= 12V, IE=0.5A VCB=–10V, f=1MHz Exte rnal Dimensions MT-25(TO220) 3.0±0.2 1 0.2±0.2 4.8±0.2 2.0±0.1 Unit µA A V 16.0±0.7 8.8±0.2 a b ø3.75±0 .2 MHz 1.35 ∗hFE Rank O(50 to 100) , P(70 to 140), Y(90 to 180) 2.5 B C E 0.65 +0.2 -0.1 2.5 1.4 sTypical Switc hing Characteristics (Common Emitter) V CC (V) –30 RL (Ω) 10 IC (A) –3 VB B1 (V) –10 VBB2 (V) 5 IB1 (A) –0.3 IB2 (A) 0.3 ton (µs) 0.18typ tstg (µs) 1.10typ tf (µs) 0.21typ Weight : Approx 2.6g a. Type No. b. Lot No. www.DataSheet4U.com I.

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2SA1726
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SA1726
–80
–80
–6
–6
–3
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Conditions
VCB=–80V
VEB=–6V
IC=–25mA
VCE=–4V, IC=–2A
IC=–2A, IB=–0.2A
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
2SA1726
–10max
–10max
–80min
50min
–0.5max
20typ
150typ
Unit
µA
µA
V
V
MHz
pF
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
–30 10
–3 –10
5 –0.3
IB2 ton tstg tf
(A) (µs) (µs) (µs)
0.3 0.18typ 1.10typ 0.21typ
External Dimensions MT-25(TO220)
10.2±0.2
4.8±0.2
2.0±0.1
a ø3.75±0.2
b
1.35
0.65
+0.2
-0.1
2.5 2.5
1.4
BCE
Weight : Approx 2.6g
a. Type No.
b. Lot No.
www.DataSheet4U.com
I C– V CE Characteristics (Typical)
–6
–200mA –150mA
–100mA
–80mA
–4 –50mA
V CE( s a t ) – I B Characteristics (Typical)
–3
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V)
–6
–2 –4
–30mA
–20mA
–2
IB=–10mA
0
0 –1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
–1
–2A
–4A
IC=–6A
0
0
–0.5
–1.0
–1.5
Base Current IB(A)
–2
0
0 –0.5
–1 –1.5
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
300
(VCE=–4V)
h FE– I C Temperature Characteristics (Typical)
300
(VCE=–4V)
θ j-a– t Characteristics
5
Typ
100
125˚C
25˚C
100 –30˚C
50
30
–0.02
–0.1
–0.5 –1
Collector Current IC(A)
50
–5 –6
30
–0.02
–0.1
–0.5 –1
Collector Current IC(A)
1
–5 –6
0.5
0.4
1
10 100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=–12V)
30
Typ
20
10
0
0.02
0.05 0.1
0.5 1
Emitter Current IE(A)
56
Safe Operating Area (Single Pulse)
–20
–10
–5
100ms
10ms
DC
–1
–0.5
–0.1
–0.05
–3
Without Heatsink
Natural Cooling
–5 –10
–50
Collector-Emitter Voltage VCE(V)
–100
Pc–Ta Derating
50
40
30
20
10
Without Heatsink
2
0
0 25 50
75 100 125
Ambient Temperature Ta(˚C)
150
31

  






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