SII200S12

SII200S12 SPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min o 310(220) 620(440) _ +20 _ 40...+150(125) 4000 190(130) 620(440) 1450 V C V Visol Inverse Diode IF=-IC TC= 25(80)oC TC= 25(80)oC, tP =1ms IFRM IFSM tP =10ms; sin.;Tj=150 oC A A A SII200S12 SPT IGBT Modules Characteristics Symbol Conditions IGBT VGE(th) VGE = VCE, IC = 6mA ICES VGE = 0; VCE = VCES; Tj = 25(125)oC VCE(TO) Tj = 25(125)oC rCE VGE = 15V, Tj = 25(125)oC VCE(sat) IC =150A; VGE = 15V; chip level Cies under following conditions C oes VGE = 0, VCE = 25V, f = 1MHz www.DataSheet4U.com Cres LCE RCC'+EE' res., terminal-chip TC = 25(125)oC under following conditions: td(on) VCC = 600V, IC = 150A tr RGon = RGoff = 7 , Tj = 125oC td(off) VGE = ± 15V tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 150A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 150A; Tj = 125oC Qrr di/dt = 4800A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanical Data Ms to heatsink M6 Mt to terminals M6 w TC = 25oC, unless otherwise specified min. 4.8 typ. max. Units V mA V m V nF 20 0.35(0.5) 125 50 620 55 18(15) 2(1.8) 1.1 6 190 24 8 0.095 0.25 0.038 3 2.5 5 5 325 2.5 1.2 8.7 nH m ns ns ns ns mJ V V m A...