NPT IGBT
SII75N12
NPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
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Absolute Maximum Ratings Symbol VCES IC ...
Description
SII75N12
NPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
www.DataSheet4U.com
Absolute Maximum Ratings Symbol VCES IC ICRM VGES
Ptot TVj,(Tstg) Visol RthJC RthJCD
o
TC = 25oC, unless otherwise specified Conditions
Values 1200 105(75) 210(150) _ +20 625 _ 40...+125(150) 2500 _ < 0.2
o
Units V A A V
W C
TC= 25(80) C TC= 25(80)oC, tP =1ms
_ Tstg TOPERATION < AC, 1min
V
K/W
_ 0.5 <
Sirectifier
R
SII75N12
NPT IGBT Modules
Electeical Characteristics
Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =3mA ICES VGE = 0; VCE = 1200V; Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =75A; VGE = 15V; Tj = 25(125)oC; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres www.DataSheet4U.com gfs VCE=20V, IC=75A Switching Characteristics td(on) VCC = 600V, IC = 75A tr RGon = RGoff =15 , Tj = 125oC td(off) VGE = ± 15V tf FWD under following conditions: VF IF = 75A, VGE = 0V, Tj = 25(125)oC trr IF =75A, VR=_ 600V, VGE=0V,di/dt= _900A/us, Tj = 125oC _ IF = 75A, VGE = 0V, VR= 600V Qrr _ di/dt= 900A/us, Tj = 25(125)oC Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 1(4.5) 2.5(3.1) 5.5 0.8 0.3
31
max. 6.5 1.5 320 3(3.7)
Units V mA nA V
nF S
30 70 450 70 2.3(1.8) 0.125 3.2(12)
60 140 600 100 2.8
ns
V us uC
Mechanical Data 5 5 160 Nm Nm g
Sirectifier
R
SII75N12
NPT IGBT Modules
Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C
650 W 550 Ptot 500 450 400 350 10 ...
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