DatasheetsPDF.com

PCHMB200A6 Dataheets PDF



Part Number PCHMB200A6
Manufacturers Nihon Inter Electronics Corporation
Logo Nihon Inter Electronics Corporation
Description IGBT
Datasheet PCHMB200A6 DatasheetPCHMB200A6 Datasheet (PDF)

IGBT MODULE Chopper 200A 600V CIRCUIT OUTLINE DRAWING PCHMB200A6 2- fasten- tab No 110 Dimension(mm) Approximate Weight : 320g www.DataSheet4U.com MAXMUM RATINGS (Tc=25°C) Item Symbol VCES VGES IC IC PC Tj Tstg VISO FTOR PCHMB200A6 600 +/ - 20 200 400 780 -40 to +150 -40 to +125 2500 3.06 2.04 Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Unit V V A W °C °C V N•m Typ. 2.1 20000 0.15 0.25 0.2 0.45 Collector Power Dissipation Junction Temperature Range Stora.

  PCHMB200A6   PCHMB200A6



Document
IGBT MODULE Chopper 200A 600V CIRCUIT OUTLINE DRAWING PCHMB200A6 2- fasten- tab No 110 Dimension(mm) Approximate Weight : 320g www.DataSheet4U.com MAXMUM RATINGS (Tc=25°C) Item Symbol VCES VGES IC IC PC Tj Tstg VISO FTOR PCHMB200A6 600 +/ - 20 200 400 780 -40 to +150 -40 to +125 2500 3.06 2.04 Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Unit V V A W °C °C V N•m Typ. 2.1 20000 0.15 0.25 0.2 0.45 Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Mounting Torque Module Base to Heat sink Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Switching Time Turn-on Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) C ies r on f off Test Condition VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=200A,VGE=15V VCE=5V,IC=200mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 3 ohm RG= 3.6 ohm VGE= +/- 15V Min. 4.0 - Max. 2.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 200 400 Unit A Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=200A,VGE=0V IF=200A,VGE=-10V,di/dt=200A/µs Min. - Typ. 1.9 0.15 Max. 2.4 0.25 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.16 0.38 IGBT MODULE Chopper 200A 600V 600V Fig.1- Output Characteristics (Typical) 400 PCHMB200A6 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ V GE =20V 12V 16 TC=25 ℃ I C=80A 400A Collector to Emitter Voltage V CE (V) 15V 10V 14 200A 12 10 8 6 4 2 0 Collector Current I C (A) 300 200 9V 100 www.DataSheet4U.com 0 0 2 4 6 8 8V 7V 10 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) Gate to Emitter Voltage V GE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 300 250 200 16 TC=125 ℃ I C=80A 400A Collector to Emitter Voltage V CE (V) 200A 12 10 8 6 4 2 0 Collector to Emitter Voltage V CE (V) 14 RL=1.5 Ω TC=25 ℃ 14 Gate to Emitter Voltage V GE (V) 12 10 8 VCE=300V 150 6 200V 100 50 0 0 150 300 450 600 750 900 100V 4 2 0 0 4 8 12 16 20 Gate to Emitter Voltage V GE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 100000 50000 20000 Fig.6- Collector Current vs. Switching Time (Typical) 1 0.9 0.8 Cies Coes Cres VGE =0V f=1MHZ TC=25 ℃ VCC=300V RG=3.6 Ω VGE = ± 15V TC=25 ℃ Switching Time t ( μ s) Capacitance C (pF) 10000 5000 2000 1000 500 200 100 0.2 0.5 1 2 5 10 20 50 100 200 0.7 0.6 0.5 0.4 0.3 0.2 0.1 .


SII75S12 PCHMB200A6 YAC520


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)