Document
IGBT MODULE Chopper 200A 600V
CIRCUIT OUTLINE DRAWING
PCHMB200A6
2- fasten- tab No 110
Dimension(mm)
Approximate Weight : 320g
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MAXMUM RATINGS (Tc=25°C) Item
Symbol
VCES VGES IC IC PC Tj Tstg VISO FTOR
PCHMB200A6
600 +/ - 20 200 400 780 -40 to +150 -40 to +125 2500 3.06 2.04
Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms
Unit V V A W °C °C V N•m Typ.
2.1 20000 0.15 0.25 0.2 0.45
Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Mounting Torque
Module Base to Heat sink Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic
Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Switching Time
Turn-on Time Fall Time Turn-off Time
Symbol
ICES IGES VCE(sat) VGE(th) C ies r on f off
Test Condition
VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=200A,VGE=15V VCE=5V,IC=200mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 3 ohm RG= 3.6 ohm VGE= +/- 15V
Min.
4.0 -
Max.
2.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7
Unit mA µA V V pF µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value
Forward Current DC 1 ms IF IFM 200 400
Unit A
Characteristic
Peak Forward Voltage Reverse Recovery Time
Symbol
VF trr
Test Condition
IF=200A,VGE=0V IF=200A,VGE=-10V,di/dt=200A/µs
Min.
-
Typ.
1.9 0.15
Max.
2.4 0.25
Unit V µs Unit °C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
Max.
0.16 0.38
IGBT MODULE Chopper 200A 600V 600V
Fig.1- Output Characteristics (Typical)
400
PCHMB200A6
Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
TC=25 ℃ V GE =20V 12V
16
TC=25 ℃ I C=80A 400A
Collector to Emitter Voltage V CE (V)
15V 10V
14
200A
12 10 8 6 4 2 0
Collector Current I C (A)
300
200
9V
100
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0 0 2 4 6 8
8V 7V
10
0
4
8
12
16
20
Collector to Emitter Voltage V CE (V)
Gate to Emitter Voltage V GE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
400 350 300 250 200 16
TC=125 ℃ I C=80A 400A
Collector to Emitter Voltage V CE (V)
200A
12 10 8 6 4 2 0
Collector to Emitter Voltage V CE (V)
14
RL=1.5 Ω TC=25 ℃
14
Gate to Emitter Voltage V GE (V)
12 10 8
VCE=300V
150 6
200V
100 50 0 0 150 300 450 600 750 900
100V
4 2 0
0
4
8
12
16
20
Gate to Emitter Voltage V GE (V)
Total Gate Charge Qg (nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
100000 50000 20000
Fig.6- Collector Current vs. Switching Time (Typical)
1 0.9 0.8
Cies Coes Cres
VGE =0V f=1MHZ TC=25 ℃
VCC=300V RG=3.6 Ω VGE = ± 15V TC=25 ℃
Switching Time t ( μ s)
Capacitance C (pF)
10000 5000 2000 1000 500 200 100 0.2 0.5 1 2 5 10 20 50 100 200
0.7 0.6 0.5 0.4 0.3 0.2 0.1 .