29LV160C Datasheet: 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY





29LV160C 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY Datasheet

Part Number 29LV160C
Description 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
Manufacture Macronix International
Total Page 30 Pages
PDF Download Download 29LV160C Datasheet PDF

Features: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FE ATURES • Extended single - supply vol tage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only ope ration for read, erase and program oper ation • Fully compatible with MX29LV1 60B device • Fast access time: 55R/70 /90ns www.DataSheet4U.com • Low power consumption - 30mA maximum active curr ent - 0.2uA typical standby current • Command register architecture - Byte/w ord Programming (9us/11us typical) - Se ctor Erase (Sector structure 16K-Bytex1 , 8K-Bytex2, 32K-Bytex1, and 64K-Byte x 31) • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspe nd capability. - Automatically program and verify data at specified address Erase Suspend/Erase Resume - Suspends sector erase operation to read data fr om, or program data to, any sector that is not being erased, then resumes the erase. • Status Reply - Data# Polling & To.

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MX29LV160C T/B
FEATURES
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
• Extended single - supply voltage range 2.7V to 3.6V
• 2,097,152 x 8/1,048,576 x 16 switchable
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
Fully compatible with MX29LV160B device
www.DataSheet4UF.caomst access time: 55R/70/90ns
• Low power consumption
- 30mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase Suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
• Status Reply
- Data# Polling & Toggle bit for detection of program
and erase operation completion.
• Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion.
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors.
• CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Low VCC write inhibit is equal to or less than 1.4V
• Package type:
- 44-pin SOP
- 48-pin TSOP
- 48-ball CSP
- All Pb-free devices are RoHS Compliant
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 10 years data retention
GENERAL DESCRIPTION
The MX29LV160C T/B is a 16-mega bit Flash memory
organized as 2M bytes of 8 bits or 1M words of 16 bits.
MXIC's Flash memories offer the most cost-effective
and reliable read/write non-volatile random access
memory. The MX29LV160C T/B is packaged in 44-pin
SOP, 48-pin TSOP and 48-ball CSP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV160C T/B offers access time as
fast as 55ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29LV160C T/B has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV160C T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV160C T/B uses a 2.7V~3.6V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
P/N:PM1186
REV. 1.2, JAN. 19, 2006
1

                    
                    






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