CIL928A Datasheet: (CIL928A / CIL2328) SILICON PLANAR EPITAXIAL TRANSISTORS





CIL928A (CIL928A / CIL2328) SILICON PLANAR EPITAXIAL TRANSISTORS Datasheet

Part Number CIL928A
Description (CIL928A / CIL2328) SILICON PLANAR EPITAXIAL TRANSISTORS
Manufacture Continental Device India Limited
Total Page 4 Pages
PDF Download Download CIL928A Datasheet PDF

Features: Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company SILICON PLANAR EPITAXIAL T RANSISTORS CIL928A PNP CIL2328A NPN TO -92 Plastic Package E CB www.DataShe et4U.com For use in Audio Power Amplif ier ABSOLUTE MAXIMUM RATINGS DESCRIPTIO N Collector Base Voltage Collector Emit ter Voltage Emitter Base Voltage Collec tor Current Continuous Collector Curren t Peak Power Dissipation @ Ta=25ºC Ope rating and Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC ICM PD Tj, Tstg VALUE 30 30 5.0 1.5 2.0 0.7 - 55 to +150 UNITS V V V A A W ºC ELECT RICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collec tor Base Voltage Collector Emitter Volt age Emitter Base Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturati on Voltage Base Emitter On Voltage Tran sition Frequency Output Capacitance SYM BOL VCBO VCEO VEBO ICBO IEBO *hFE *VCE( sat) *VBE(on) fT Cob TEST CONDITION IC=100µA, IE=0 IC=10mA, IB=0 I.

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
CIL928A PNP
CIL2328A NPN
TO-92
Plastic Package
ECB
www.DataSheet4U.com
For use in Audio Power Amplifier
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Power Dissipation @ Ta=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
Tj, Tstg
VALUE
30
30
5.0
1.5
2.0
0.7
- 55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Base Voltage
VCBO
IC=100µA, IE=0
Collector Emitter Voltage
VCEO
IC=10mA, IB=0
Emitter Base Voltage
VEBO
IE=1mA, IC=0
Collector Cut off Current
ICBO
VCB=30V, IE = 0
Emitter Cut off Current
IEBO
VEB=5V, IC = 0
DC Current Gain
*hFE VCE=2V, IC=500mA
Collector Emitter Saturation Voltage
*VCE(sat)
IC=1.5A, IB=30mA
Base Emitter On Voltage
*VBE(on)
VCE=2V, IC=500mA
Transition Frequency
fT IC=500mA, VCE=2V
Output Capacitance
Cob IE=0, VCB=10V, f=1MHz
NPN
PNP
MIN
30
30
5
100
TYP
120
30
48
MAX
0.1
0.1
320
2.0
1.0
UNITS
V
V
V
A
A
W
ºC
UNITS
V
V
V
µA
µA
V
V
MHz
pF
pF
*hFE Classification
*Pulse Test: Pulse Width <300µs, Duty Cycle<2%
O : 100 - 200 ,
Y : 160 - 320
Continental Device India Limited
Data Sheet
Page 1 of 4

           






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