SI1303EDL

Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.430 @ VGS = –4.5 V –20 20 0.480 @ VGS = –3.6 V 0.700 @ VGS = –2.5 V ID (A) "0.72 "0.68 "0.56 www.DataSheet4U.com SOT-323 SC-70 (3-LEADS) G 1 Marking Code 3 D LD XX YY Lot Traceability and Date Code S 2 Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg –0.28 0.34 0.22 –55 to 150 Symbol VDS VGS 5 secs Steady State –20 "12 Unit V "0.72 "0.58 "2.5 "0.67 "0.54 A –0.24 0.29 W 0.19 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71094 S-99400—Rev. A, 29-Nov-99 www.siliconix.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 315 360 285 Maximum 375 430 340 Unit _C/W 1 Si1303DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "4.5 V VDS = –20 V, VGS = 0 V VDS = –20 V, VGS = 0 V, ...