2SC5695 Datasheet PDF Download, Toshiba Semiconductor





(PDF) 2SC5695 Datasheet Download

Part Number 2SC5695
Description SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Manufacture Toshiba Semiconductor
Total Page 5 Pages
PDF Download Download 2SC5695 Datasheet PDF

Features: 2SC5695 TOSHIBA Transistor Silicon NPN T riple Diffused Mesa Type 2SC5695 Horiz ontal Deflection Output for High Resolu tion Display, Color TV · · · High vo ltage: VCBO = 1500 V Low saturation vol tage: VCE (sat) = 3 V (max) High speed: tf (2) = 0.1 µs (typ.) Unit: mm www. DataSheet4U.com Maximum Ratings (Tc = 25°C) Characteristics Collector-base v oltage Collector-emitter voltage Emitte r-base voltage Collector current Base c urrent Collector power dissipation Junc tion temperature Storage temperature ra nge DC Pulse Symbol VCBO VCEO VEBO IC I CP IB PC Tj Tstg Rating 1500 700 5 22 4 4 11 200 150 -55~150 Unit V V V A A W C °C JEDEC JEITA TOSHIBA ― ― 2- 21F2A Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-o ff current Emitter cut-off current Coll ector-emitter breakdown voltage Symbol ICBO IEBO V(BR) CEO hFE (1) DC current gain hFE (2) hFE (3) Collector-emitter saturation voltage Base-emitter saturat ion voltage Transition frequency Collector output capacitance Storage time .

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TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5695
Horizontal Deflection Output for High Resolution Display,
Color TV
2SC5695
Unit: mm
· High voltage: VCBO = 1500 V
· Low saturation voltage: VCE (sat) = 3 V (max)
· High speed: tf (2) = 0.1 µs (typ.)
www.DataSheet4U.com
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
1500
700
5
22
44
11
200
150
-55~150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Tc = 25°C)
JEDEC
JEITA
TOSHIBA
2-21F2A
Weight: 9.75 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Storage time
Switching time
Fall time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V(BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg (1)
tf (1)
tstg (2)
tf (2)
VCB = 1500 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 10 A
VCE = 5 V, IC = 17 A
IC = 17 A, IB = 4.25 A
IC = 17 A, IB = 4.25 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 8 A, IB1 (end) = 1.4 A,
fH = 64 kHz
ICP = 8 A, IB1 (end) = 1.1 A,
fH = 100 kHz
Min Typ. Max Unit
¾¾
1 mA
¾ ¾ 10 mA
700 ¾ ¾ V
20 ¾ 50
8 ¾ 17 ¾
4.8 ¾ 8.3
¾¾ 3 V
¾ 1.0 1.5 V
¾ 2 ¾ MHz
¾ 280 ¾
pF
¾ 2.5
3
¾ 0.15 0.3
1.6 1.8
ms
¾ 0.1 0.15
1 2001-10-29

              






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