2SC5698 Datasheet PDF Download, Sanyo Semicon Device





(PDF) 2SC5698 Datasheet Download

Part Number 2SC5698
Description NPN Triple Diffused Planar Silicon Transistor
Manufacture Sanyo Semicon Device
Total Page 4 Pages
PDF Download Download 2SC5698 Datasheet PDF

Features: Ordering number : ENN6664A 2SC5698 NPN Triple Diffused Planar Silicon Transist or 2SC5698 CRT Display Horizontal Defl ection Output Applications Features Hig h speed. High breakdown voltage(VCBO=15 00V). • High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process. •t 4 Adoption • On-c hip damper diode. • • Package Dime nsions unit : mm 2174A [2SC5698] 16.0 5 .0 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2. 8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 0.8 2.1 Specifications Absolute Maxi mum Ratings at Ta=25°C Parameter Colle ctor-to-Base Voltage Collector-to-Emitt er Voltage Emitter-to-Base Voltage Coll ector Current Collector Current (Pulse) Collector Dissipation Junction Tempera ture Storage Temperature Symbol VCBO VC EO VEBO IC ICP PC Tj Tstg Tc=25°C Cond itions 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Ratings 1500 800 5 8 16 3.0 65 150 --55 to +150 Unit V V V A A W W °C °C Electrical Char acteristics at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Cu.

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Ordering number : ENN6664A
2SC5698
NPN Triple Diffused Planar Silicon Transistor
2SC5698
CRT Display Horizontal Deflection
Output Applications
Features
High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
w w w . D a t a S h e et 4AUd.ocpotimon of MBIT process.
On-chip damper diode.
Package Dimensions
unit : mm
2174A
[2SC5698]
16.0 3.4
5.6
3.1
2.8
2.0 2.1
0.7 0.9
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Ratings
1500
800
5
8
16
3.0
65
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
IC=4.5A, IB=1.13A
IC=4.5A, IB=1.13A
min
800
40
Ratings
typ
max
Unit
10 µA
1.0 mA
V
130 mA
3V
1.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52101 TS IM TA-3147 / 82200 TS IM TA-3014 No.6664-1/4

           






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