2SC5699 Datasheet PDF Download, Sanyo Semicon Device





(PDF) 2SC5699 Datasheet Download

Part Number 2SC5699
Description NPN Triple Diffused Planar Silicon Transistor
Manufacture Sanyo Semicon Device
Total Page 4 Pages
PDF Download Download 2SC5699 Datasheet PDF

Features: Ordering number : ENN6665A 2SC5699 NPN Triple Diffused Planar Silicon Transist or 2SC5699 CRT Display Horizontal Defl ection Output Applications Features Hig h speed. High breakdown voltage(VCBO=15 00V). • High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process. •t 4 Adoption • • Package Dimensions unit : mm 2174A [2S C5699] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 0.8 2.1 Specifications Absolute Maximum Ratings at Ta=25°C Pa rameter Collector-to-Base Voltage Colle ctor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Cu rrent (Pulse) Collector Dissipation Jun ction Temperature Storage Temperature S ymbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Ratings 1500 800 5 8 16 3.0 65 150 --55 to +150 Unit V V V A A W W °C °C El ectrical Characteristics at Ta=25°C Pa rameter Collector Cutoff Current Collector Cutoff Current Collector Sustain .

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Ordering number : ENN6665A
2SC5699
NPN Triple Diffused Planar Silicon Transistor
2SC5699
CRT Display Horizontal Deflection
Output Applications
Features
High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
w w w . D a t a S h e et 4AUd.ocpotimon of MBIT process.
Package Dimensions
unit : mm
2174A
[2SC5699]
16.0 3.4
5.6
3.1
2.8
2.0 2.1
0.7 0.9
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Ratings
1500
800
5
8
16
3.0
65
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
IC=4.5A, IB=1.13A
IC=4.5A, IB=1.13A
min
800
Ratings
typ
max
Unit
10 µA
1.0 mA
V
1 mA
3V
1.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52101 TS IM TA-3147 / 82200 TS IM TA-3015 No.6665-1/4

           






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