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P4C170 Dataheets PDF



Part Number P4C170
Manufacturers Pyramid Semiconductor Corporation
Logo Pyramid Semiconductor Corporation
Description (P4C168 - P4C170) ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS
Datasheet P4C170 DatasheetP4C170 Datasheet (PDF)

P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Low Power Operation (Commercial) – 715 mW Active – 193 mW Standby (TTL Input) P4C168 www.DataSheet4U.com – 83 mW Standby (CMOS Input) P4C168 Single 5V±10% Power Supply Fully TTL Compatible, Common I/O Ports Three Options – P4C168 Low Power Standby Mode – P4C169 Fast Chip Select Control – P4C17.

  P4C170   P4C170



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P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Low Power Operation (Commercial) – 715 mW Active – 193 mW Standby (TTL Input) P4C168 www.DataSheet4U.com – 83 mW Standby (CMOS Input) P4C168 Single 5V±10% Power Supply Fully TTL Compatible, Common I/O Ports Three Options – P4C168 Low Power Standby Mode – P4C169 Fast Chip Select Control – P4C170 Fast Chip Select, Output Enable Controls Standard Pinout (JEDEC Approved) – P4C168: 20-pin DIP, SOJ, LCC, SOIC, CERPACK, and Flat Pack – P4C169: 20-pin DIP and SOIC – P4C170: 22-pin DIP DESCRIPTION The P4C168, P4C169 and P4C170 are a family of 16,384-bit ultra high-speed static RAMs organized as 4K x 4. All three devices have common input/output ports.The P4C168 enters the standby mode when the chip enable (CE) control goes HIGH; with CMOS input levels, power consumption is only 83mW in this mode. Both the P4C169 and the P4C170 offer a fast chip select access time that is only 67% of the address access time. In addition, the P4C170 includes an output enable (OE) control to eliminate data bus contention. The RAMs operate from a single 5V ± 10% tolerance power supply. Access times as fast as 12 nanoseconds are available, permitting greatly enhanced system operating speeds. CMOS is used to reduce power consumption to a low 715 mW active, 193 mW standby. The P4C168 and P4C169 are available in 20-pin (P4C170 in 22-pin) 300 mil DIP packages providing excellent board level densities. The P4C168 is also available in 20pin 300 mil SOIC, SOJ, CERPACK, and Flat Pack packages. The P4C169 is also available in a 20-pin 300 mil SOIC package. FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATIONS P4C168 P4C169 DIP (P2, C6, D2) DIP (P2) SOIC (S2) SOIC (S2) SOJ (J2) CERPACK (F2) SOLDER SEAL FLAT PACK (FS-2) P4C170 DIP (P3) Document # SRAM107 REV A 1 Revised October 2005 P4C168, P4C169, P4C170 MAXIMUM RATINGS(1) Symbol VCC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Temperature Value – 0.5 to +7 – 0.5 to VCC +0.5 –55 to +125 Unit V Symbol TBIAS TSTG PT IOUT Parameter Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value – 55 to +125 – 65 to +150 1.0 50 Unit °C °C W mA VTERM TA V °C RECOMMENDED OPERATING CONDITIONS Grade(2) Commercial www.DataSheet4U.com Military Ambient Temp 0°C to 70°C –55°C to +125°C Gnd 0V 0V VCC 5.0V ± 10% 5.0V ± 10% CAPACITANCES(4) (VCC = 5.0V, TA = 25°C, f = 1.0MHz) Symbol CIN COUT Parameter Input Capacitance Conditions Typ. Unit VIN = 0V 5 7 pF pF Output Capacitance VOUT= 0V DC ELECTRICAL CHARACTERISTICS Symbol VIH VIL VHC VLC VCD VOL VOLC VOH VOHC ILI ILO ICC ISB Parameter Input High Voltage Input Low Voltage CMOS Input High Voltage CMOS Input Low Voltage Input Clamp Diode Voltage Output Low Voltage (TTL Load) Output Low Voltage (CMOS Load) Output High Voltage (TTL Load) Output High Voltage (CMOS Load) Input Leakage Current Output Leakage Current Dynamic Operating Current Standby Power Supply Current (TTL Input Levels) P4C168 only Standby Power Supply Current (CMOS Input Levels) P4C168 only VCC = Min., IIN = –18 mA IOL = +8 mA, VCC = Min. IOLC = +100 µA, VCC = Min. IOH = –4 mA, VCC = Min. IOHC = –100 µA, VCC = Min. VCC = Max., VIN = GND to VCC VCC = Max., CS = VIH, VOUT = GND to VCC Mil. Comm’l Mil. Comm’l 2.4 VCC –0.2 –10 –5 –10 –5 ___ ___ Test Conditions P4C168/169/170 Min 2.2 –0.5(3) VCC –0.2 –0.5(3) Max VCC +0.5 0.8 VCC +0.5 0.2 –1.2 0.4 0.2 Unit V V V V V V V V V +10 +5 +10 +5 130 35 µA µA mA mA VCC = Max., f = Max., Outputs Open CE ≥ VIH, VCC = Max., f = Max., Outputs Open CE ≥ VHC, VCC = Max., f = 0, Outputs Open VIN ≤ VLC or VIN ≥ VHC ISB1 ___ 15 mA Document # SRAM107 REV A Page 2 of 15 P4C168, P4C169, P4C170 AC CHARACTERISTICS—READ CYCLE (VCC = 5V ± 10%, All Temperature Ranges)(2) Sym tRC tAA tAC § tAC ‡ Parameter Read Cycle Time Address Access Time Chip Enable Access Time Chip Select Access Time Output Hold from Address Change Chip Enable to Output in Low Z Chip Disable to Output in High Z Output Enable to Data Valid Output Enable to Output in Low Z Output Disable to Output in High Z Read Command Setup Time Read Command Hold Time Chip Enable to Power Up Time Chip Disable to Power Down Time -12 -15 -20 -25 -35 Min Max Min Max Min Max Min Max Min Max 12 12 12 8 2 2 7 8 0 6 0 0 0 12 0 0 0 15 0 7 0 0 0 20 2 2 8 10 0 9 0 0 0 25 15 15 15 9 2 2 9 12 0 11 0 0 0 35 20 20 20 12 2 2 10 15 0 15 25 25 25 15 2 2 15 15 35 35 35 20 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns tOH tLZ ‡ tHZ † www.DataSheet4U.com tOE† tOLZ † tOHZ tRCS tRCH tPU § tPD § † AC CHARACTERISTICS—READ CYCLE (CONTINUED) (VCC = 5V ± 10%, All Temperature Ranges)(2) Sym t RC t AA t AC § t OH t LZ ‡ t HZ † Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Hold from Address Change Chip Enable to Outp.


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