D717 Datasheet: 2SD717





D717 2SD717 Datasheet

Part Number D717
Description 2SD717
Manufacture Wing Shing Electronic
Total Page 1 Pages
PDF Download Download D717 Datasheet PDF

Features: 2SD717 GENERAL DESCRIPTION Silicon Epit axial Planar Transistor Silicon NPN hi gh frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REF ERENCE DATA SYMBOL PARAMETER Collector- emitter voltage peak value VCBO Collect or-emitter voltage (open base) VCEO Col lector current (DC) IC www.DataSheet4U. com Collector current peak value ICM To tal power dissipation Ptot Collector-em itter saturation voltage VCEsat Diode f orward voltage VF Fall time tf CONDITIO NS VBE = 0V TO-3P(I)D TYP MAX 70 70 10 80 2 2.0 1.0UNIT V V A A W V V s Tmb 25 IC = 4.0A; IB=0.4A IF = 3.5A IC=4A,I B1=-IB2=0.4A,VCC=30V 1.5 0.4 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB P tot Tstg Tj PARAMETER Collector-emitte r voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC ) Base current (DC) Total power dissipa tion Storage temperature Junction tempe rature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 70 70 5 10 .

Keywords: D717, datasheet, pdf, Wing Shing Electronic, 2SD717, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

2SD717
Silicon Epitaxial Planar Transistor
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in
a plastic envelope, primarily for use in audio and
general purpose
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCBO
Collector-emitter voltage peak value
VCEO
Collector-emitter voltage (open base)
www.DataICSheet4U.coCmollector current (DC)
ICM Collector current peak value
Ptot Total power dissipation
VCEsat
Collector-emitter saturation voltage
VF Diode forward voltage
tf Fall time
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
TO-3P(I)D
Tmb 25
IC = 4.0A; IB=0.4A
IF = 3.5A
IC=4A,IB1=-IB2=0.4A,VCC=30V
CONDITIONS
VBE = 0V
Tmb 25
TYP MAX UNIT
- 70 V
- 70 V
- 10 A
-A
- 80 W
- 2V
1.5 2.0
V
0.4 1.0-
s
MIN MAX UNIT
- 70 V
- 70 V
5V
- 10 A
- 2.5 A
- 80 W
-55 150
- 150
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
Cc
ton
ts
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
VCB=70V
VEB=5V
IC=1mA
IC = 4.0A; IB = 0.4A
IC = 1A; VCE = 5V
IC = 1A; VCE = 12V
VCB = 10V
IC=4A,IB1=-IB2=0.4A,VCC=30V
IC=4A,IB1=-IB2=0.4A,VCC=30V
IC=4A,IB1=-IB2=0.4A,VCC=30V
TYP MAX UNIT
- 0.2 mA
- 0.2 mA
70 V
- 3V
50 240
10 - MHz
350 -
pF
0.3 us
2.5 us
0.4 us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com

  






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)