70N03 Datasheet: N-channel Enhancement-mode MOSFET





70N03 N-channel Enhancement-mode MOSFET Datasheet

Part Number 70N03
Description N-channel Enhancement-mode MOSFET
Manufacture General Semiconductor
Total Page 5 Pages
PDF Download Download 70N03 Datasheet PDF

Features: GFB70N03 N-Channel Enhancement-Mode MOSF ET H C N T E TRE NF E G TO-263AB 0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min. D VDS 30V RDS(ON) 8mΩ ID 70A D ® G 0.160 (4.06) 0.190 (4.83) 0.045 (1. 14) 0.055 (1.40) S 0.42 (10.66) 0.32 0 (8.13) www.DataSheet4U.com 0.360 (9.1 4) G PIN D S 0.575 (14.60) 0.625 (15.8 8) 0.055 (1.39) 0.066 (1.68) Dimension s in inches and (millimeters) 0.63 (17. 02) 0.33 (8.38) Seating Plate -T0.09 6 (2.43) 0.102 (2.59) 0.027 (0.686) 0.0 37 (0.940) 0.120 (3.05) 0.155 (3.94) 0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.130 (3.30) 0.08 (2.032) 0.24 (6.096) 0.12 (3.05) Mounting Pad Layout Mecha nical Data Case: JEDEC TO-263 molded pl astic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High tempe rature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 1.3g Features • Advance d Trench Process Technology • High De nsity Cell Design for Ultra Low On-Resi stance • Specially Designed for Low Voltage DC/DC Converters • Fast Swi.

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GFB70N03
N-Channel Enhancement-Mode MOSFET
TGREENNCFHET®
VDS 30V RDS(ON) 8mID 70A
D
TO-263AB
G
0.380 (9.65)
0.420 (10.67)
0.21 (5.33)
Min.
D
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
S
0.42
(10.66)
www.DataS0h.3e20e(t84.1U3).com
0.360 (9.14)
PIN
GDS
Seating Plate
-T-
0.096 (2.43)
0.102 (2.59)
0.027 (0.686)
0.037 (0.940)
0.575 (14.60)
0.625 (15.88)
0.120 (3.05)
0.155 (3.94)
0.055 (1.39)
0.066 (1.68)
Dimensions in inches
and (millimeters)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
0.63
(17.02)
0.33
(8.38)
Mounting Pad
Layout
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
Mechanical Data
Case: JEDEC TO-263 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 1.3g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
Continuous Drain Current(1)
VGS
± 20
ID 70
Pulsed Drain Current
IDM 200
Maximum Power Dissipation
TC = 25°C
TC = 100°C
PD
62.5
25
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Lead Temperature (1/8” from case for 5 sec.)
TL 275
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(2)
RθJC
RθJA
2.0
40
Notes: (1) Maximum DC current limited by the package
(2) 1-in2 2oz. Cu PCB mounted
Unit
V
A
W
°C
°C
°C/W
°C/W
5/16/01

              






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