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Absolute Maximum Ratings VOLTAGE RATINGS
VDRM Repetitive peak off-state voltage, (note 1)
Date:- 6 Feb, 2001 Data Sheet Issue:- 1
Phase Control Thyristor Types N1718NS120 to N1718NS180
MAXIMUM LIMITS
1200-1800 1200-1800 1200-1800 1300-1900
UNITS
V V V V
VDSM Non-repetitive peak off-state voltage, (note 1) www.DataSheet4U.com VRRM VRSM Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1)
OTHER RATINGS
IT(AV) IT(AV) IT(AV) IT(RMS) IT(d.c.) ITSM ITSM2 It It diT/dt VRGM PG(AV) PGM VGD THS Tstg
2 2
MAXIMUM LIMITS
1718 1143 663 3450 2852 27.2 29.9 3.70×10 4.47×10 500 1000 5 4 30 0.25 -40 to +125 -40 to +150
6 6
UNITS
A A A A A kA kA As As A/µs A/µs V W W V °C °C
2 2
Mean on-state current, Tsink=55°C, (note 2) Mean on-state current. Tsink=85°C, (note 2) Mean on-state current. Tsink=85°C, (note 3) Nominal RMS on-state current, 25°C, (note 2) D.C. on-state current, 25°C, (note 4) Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5) Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5) I t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5) I t capacity for fusing tp=10ms, VRM≤10V, (note 5)
2 2
Maximum rate of rise of on-state current (repetitive), (Note 6) Maximum rate of rise of on-state current (non-repetitive), (Note 6) Peak reverse gate voltage Mean forward gate power Peak forward gate power Non-trigger gate voltage, (Note 7) Operating temperature range Storage temperature range
Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Single side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125°C Tj initial. 6) VD=67% VDRM, ITM=1500A, IFG=2A, tr≤0.5µs, Tcase=125°C. 7) Rated VDRM.
Data Sheet Issue 1. Types N1718NS120 to N1718NS180.
Page 1 of 9
February, 2001
WESTCODE Positive development in power electronics
Characteristics
N1718NS120 to N1718NS180
PARAMETER
VTM V0 rS dv/dt IDRM IRRM VGT IGT IH Maximum peak on-state voltage Threshold voltage Slope resistance Critical rate of rise of off-state voltage Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Holding current heatsink
MIN.
1000 19 -
TYP.
510
MAX. TEST CONDITIONS (Note 1)
1.41 0.979 0.169 100 100 3.0 300 1000 0.024 0.048 26 VD=80% VDRM Rated VDRM Rated VRRM Tj=25°C Tj=25°C. Tj=25°C Double side cooled Single side cooled VD=10V, IT=2A ITM=2550A
UNITS
V V mΩ V/µs mA mA V mA mA K/W K/W kN g
Thermal resistance, junction to www.DataSheet4U.com Rθ F Wt Mounting force Weight
Notes:1) Unless otherwise indicated Tj=125°C.
Data Sheet Issue 1. Types N1718NS120 to N1718NS180.
Page 2 of 9
February, 2001
WESTCODE Positive development in power electronics
Notes on Ratings and Characteristics 1.0 Voltage Grade Table Voltage Grade 'H' 12 14 16 18 VDRM VDSM VRRM V 1200 1400 1600 1800 VRSM V 1300 1500 1700 1900
N1718NS120 to N1718NS180
VD VR DC V 810 930 1040 1150
2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production. 3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C. www.DataSheet4U.com 4.0 Repetitive dv/dt Standard dv/dt is1000V/µs. 5.0 Computer Modelling Parameters 5.1 Device Dissipation Calculations
I AV =
− V0 + V0 + 4 ⋅ ff 2 ⋅ rs ⋅ W AV
2
W AV =
and:
2 ⋅ ff 2 ⋅ rs
∆T Rth
∆T = T j max − THs
Where V0=0.979V,rs=0.169mΩ,
Rth = Supplementary thermal impedance, see table below. ff = Form factor, see table below.
Supplementary Thermal Impedance Conduction Angle Square wave Double Side Cooled Square wave Single Side Cooled Sine wave Double Side Cooled Sine wave Single Side Cooled 30° 0.0293 0.0534 0.0286 0.0531 60° 0.0285 0.053 0.0276 0.0523 90° 0.0278 0.0524 0.0269 0.0517 120° 0.0271 0.0518 0.0263 0.0511 180° 0.0261 0.0509 0.0248 0.0497 270° 0.0249 0.0497 d.c. 0.024 0.0489
Conduction Angle Square wave Sine wave
30° 3.46 3.98
Form Factors 60° 90° 2.45 2 2.78 2.22
120° 1.73 1.88
180° 1.41 1.57
270° 1.15
d.c. 1
Data Sheet Issue 1. Types N1718NS120 to N1718NS180.
Page 3 of 9
February, 2001
WESTCODE Positive development in power electronics
5.2 Calculating VT using ABCD Coefficients
N1718NS120 to N1718NS180
The on-state characteristic IT vs. VT, on page 7 is represented in two ways; (i) the well established Vo and rs tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of IT given below:
VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for VT agree with the true device characteristic over a current range, which is limited to that plotted. 25°C Coefficients A B C D 0.7637538 0.03561525 1.114471×10
-4
125°C Coefficients A B C D 0.5497078 0.067655 1.6257×10
-4
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