A2031 Datasheet: 2SA2031





A2031 2SA2031 Datasheet

Part Number A2031
Description 2SA2031
Manufacture Sanyo Semiconductor Corporation
Total Page 4 Pages
PDF Download Download A2031 Datasheet PDF

Features: Ordering number : ENN6586 2SA2031 / 2SC 5669 PNP Epitaxial Planar Silicon Tran sistor NPN Triple Diffused Planar Silic on Transistor 2SA2031 / 2SC5669 230V / 15A, AF100W Output Applications Featu res • • • Package Dimensions uni t : mm 2022A [2SA2031 / 2SC5669] 3.5 L arge current capacitance. Wide ASO and high durability against breakdown. Adop tion of MBIT process. www.DataSheet4U. com 15.6 14.0 2.6 3.2 4.8 2.0 1.6 2.0 20.0 1.3 1.2 15.0 20.0 0.6 1.0 1 0.6 2 3 1.4 Specifications 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SA NYO : TO-3PB Note*( ) : 2SA2031 Absolu te Maximum Ratings at Ta=25°C Paramete r Collector-to-Base Voltage Collector-t o-Emitter Voltage Emitter-to-Base Volta ge Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25 C Conditions Ratings (−)250 (−)23 0 (−)6 (−)15 (−)30 2.5 140 150 55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parame.

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Ordering number : ENN6586
2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
2SA2031 / 2SC5669
230V / 15A, AF100W Output Applications
Features
Large current capacitance.
Wide ASO and high durability against breakdown.
Adoption of MBIT process.
www.DataSheet4U.com
Package Dimensions
unit : mm
2022A
[2SA2031 / 2SC5669]
15.6 3.2
14.0
4.8
2.0
Specifications
Note*( ) : 2SA2031
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
1.6
2.0
1.0
12
0.6
3
5.45 5.45
Conditions
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Ratings
()250
()230
()6
()15
()30
2.5
140
150
55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
Conditions
VCB=(--)250V, IE=0
VEB=(--)4V, IC=0
VCE=(--)5V, IC=(--)1A
VCE=(--)5V, IC=(--)7.5A
min
60
35
Ratings
typ
max
(--)0.1
(--)0.1
160
Unit
mA
mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61500 TS IM TA-2927 No.6586-1/4

           






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