2SA2031. A2031 Datasheet

A2031 2SA2031. Datasheet pdf. Equivalent

Part A2031
Description 2SA2031
Feature Ordering number : ENN6586 2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor NPN Triple Dif.
Manufacture Sanyo Semiconductor Corporation
Datasheet
Download A2031 Datasheet

Ordering number : ENN6586 2SA2031 / 2SC5669 PNP Epitaxial A2031 Datasheet
Recommendation Recommendation Datasheet A2031 Datasheet





A2031
Ordering number : ENN6586
2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
2SA2031 / 2SC5669
230V / 15A, AF100W Output Applications
Features
Large current capacitance.
Wide ASO and high durability against breakdown.
Adoption of MBIT process.
www.DataSheet4U.com
Package Dimensions
unit : mm
2022A
[2SA2031 / 2SC5669]
15.6 3.2
14.0
4.8
2.0
Specifications
Note*( ) : 2SA2031
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
1.6
2.0
1.0
12
0.6
3
5.45 5.45
Conditions
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Ratings
()250
()230
()6
()15
()30
2.5
140
150
55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
Conditions
VCB=(--)250V, IE=0
VEB=(--)4V, IC=0
VCE=(--)5V, IC=(--)1A
VCE=(--)5V, IC=(--)7.5A
min
60
35
Ratings
typ
max
(--)0.1
(--)0.1
160
Unit
mA
mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61500 TS IM TA-2927 No.6586-1/4



A2031
2SA2031 / 2SC5669
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
fT
Cob
VBE
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=(--)5V, IC=(--)1A
VCB=(--)10V, f=1MHz
VCE=(--)5V, IC=(--)7.5A
IC=(--)7.5A, IB=(--)0.75A
IC=(--)5mA, IE=0
IC=(--)50mA, RBE=
IE=(--)5mA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
www.DataSheetS4Uw.ciocmthing Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
RB
IB2
50
+
100µF
OUTPUT
RL=
6.67
+
470µF
VBE= --2V
VCC=50V
10IB1= --10IB2=IC=7.5A
For PNP, the polarity is reversed.
Ratings
min typ
(10)15
(400)200
(--0.3)0.2
(--)250
(--)230
(--)6
(0.45)0.56
(1.75)3.3
(0.25)0.4
max
1.5
(--)2.0
Unit
MHz
pF
V
V
V
V
V
µs
µs
µs
--16
2SA2031
--14
--12
--10
IC -- VCE
--500mA
--400mA
--300mA
--200mA
--8
--100mA
--6
--4 --40mA
--20mA
--2
0 IB=0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Collector-to-Emitter Voltage, VCE -- V IT02058
IC -- VBE
--16
2SA2031
--14 VCE= --5V
--12
--10
--8
--6
--4
--2
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Base-to-Emitter Voltage, VBE -- V IT02060
16
2SC5669
14
12
IC -- VCE
400mA 300mA
200mA
10
100mA
8
6
40mA
4
20mA
2
0 IB=0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT02059
IC -- VBE
16
2SC5669
14 VCE=5V
12
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V IT02061
No.6586-2/4





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