STD3N30L
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STD3N30L
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s s s s s
V DSS 300 V
R D...
STD3N30L
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTOR
TYPE STD3N30L
www.DataSheet4U.com
s s s s s
V DSS 300 V
R DS( on) < 1.4 Ω
ID 3A
s
s
TYPICAL RDS(on) = 1.15 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)
3 1
IPAK TO-251 (Suffix ”-1”)
2
1
DPAK TO-252
3
(Suffix ”T4”)
APPLICATIONS HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s MOTOR CONTROL, AUDIO AMPLIFIERS s INDUSTRIAL ACTUATORS s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT s PARTICULARLY SUITABLE FOR ELECTRONIC FLUORESCENT LAMP BALLASTS
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M( ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 300 300 ± 15 3 2 12 50 0.4 -65 to 150 150
Unit V V V A A A W W/o C
o o
C C
() Pulse width limited by safe operating area
November 1996
1/10
STD3N30L
THERMAL DATA
R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-s...