STD3NM60-1

STP4NM60 STD3NM60, STD3NM60-1 N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET Features Type VDSS RDS(on) (@Tjmax) max )STD3NM60 t(sSTD3NM60-1 650 < 1.5 Ω cSTP4NM60 ID 3A 4A PW 42 W 69 W rodu■ High dv/dt and avalanche capabilities te P■ Improved ESD capability le■ Low input capacitance and gate charge o■ Low gate input resistance bs■ Tight process control and high manufacturing Oyields t(s) -Applications c■ Switching roduDescription PModems technology applies the benefits of the temultiple drain process to STMicroelectronics' well- known PowerMESH™ horizontal layout structure. leThe resulting product offers low on-resistance, sohigh dv/dt capability and excellent avalanche Obcharacteristics. 3 2 1 TO-220 3 1 DPAK IPAK 3 2 1 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packing STD3NM60 D3NM60 DPAK Tape and reel STD3NM60-1 D3NM60 IPAK Tube STP4NM60 P4NM60 TO-2...