FQA13N80. 13N80 Datasheet

13N80 FQA13N80. Datasheet pdf. Equivalent

Part 13N80
Description FQA13N80
Feature FQA13N80 800V N-Channel MOSFET September 2006 QFET FQA13N80 800V N-Channel MOSFET Features • 12.6A.
Manufacture Fairchild Semiconductor
Datasheet
Download 13N80 Datasheet

FQA13N80 800V N-Channel MOSFET September 2006 QFET FQA13N8 13N80 Datasheet
Recommendation Recommendation Datasheet 13N80 Datasheet





13N80
FQA13N80
800V N-Channel MOSFET
Features
• 12.6A, 800V, RDS(on) = 0.75@VGS = 10 V
• Low gate charge ( typical 68 nC)
www.DataSheet4U.cLoomw Crss ( typical 30pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
September 2006
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G DS
TO-3P
FQA Series
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA13N80
800
12.6
8.0
50.4
± 30
1100
12.6
30
4.0
300
2.38
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.42
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQA13N80 Rev. A1
1
www.fairchildsemi.com



13N80
Package Marking and Ordering Information
Device Marking
FQA13N80
FQA13N80
Device
FQA13N80
FQA13N80_F109
Package
TO-3P
TO-3PN
Reel Size
--
--
Tape Width
--
--
Quantity
30
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
www.DataSheet4U.cBoVmDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 6.3A
VDS = 50 V, ID = 6.3A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400 V, ID = 12.6A,
RG = 25
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4, 5)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 640 V, ID = 12.6A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS =12.6A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 12.6 A,
dIF / dt = 100 A/µs
(Note 4)
800
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13mH, IAS =12.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 12.6A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
0.95
--
--
--
--
--
0.58
13
2700
275
30
60
150
155
110
68
15
32
--
--
--
850
11.3
Max Units
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
5.0 V
0.75
-- S
3500
360
39
pF
pF
pF
130 ns
310 ns
320 ns
230 ns
88 nC
-- nC
-- nC
12.6 A
50.4 A
1.4 V
-- ns
-- µC
2 www.fairchildsemi.com
FQA13N80 Rev. A1





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