13N80 Datasheet PDF Download, Fairchild Semiconductor





(PDF) 13N80 Datasheet Download

Part Number 13N80
Description FQA13N80
Manufacture Fairchild Semiconductor
Total Page 9 Pages
PDF Download Download 13N80 Datasheet PDF

Features: FQA13N80 800V N-Channel MOSFET Septembe r 2006 QFET FQA13N80 800V N-Channel MO SFET Features • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate char ge ( typical 68 nC) • Low Crss ( typi cal 30pF) www.DataSheet4U.com • Fast switching • 100% avalanche tested • Improved dv/dt capability ® Descrip tion These N-Channel enhancement mode p ower field effect transistors are produ ced using Fairchild’s proprietary, pl anar stripe, DMOS technology. This adva nced technology has been especially tai lored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effici ent switched mode power supplies, activ e power factor correction, electronic l amp ballast based on half bridge topolo gy. D G TO-3P G DS FQA Series S Ab solute Maximum Ratings Symbol VDSS ID I DM VGSS EAS IAR EAR dv/dt PD TJ, TSTG T L Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Co.

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FQA13N80
800V N-Channel MOSFET
Features
• 12.6A, 800V, RDS(on) = 0.75@VGS = 10 V
• Low gate charge ( typical 68 nC)
www.DataSheet4U.cLoomw Crss ( typical 30pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
September 2006
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G DS
TO-3P
FQA Series
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA13N80
800
12.6
8.0
50.4
± 30
1100
12.6
30
4.0
300
2.38
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.42
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQA13N80 Rev. A1
1
www.fairchildsemi.com

                    
     






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