HL7852G

HL7852G GaAlAs Laser Diode Description The HL7852G is a high-power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic sealing of the package assures high reliability. ODE-208-063A (Z) Rev.1 Dec. 04, 2006 Features Visible light output: λp = 785 nm Typ Small beam ellipticity: 9.5:23 www.DataSheet4U.com High output power: 50 mW (CW) Built-in monitor photodiode Package Type HL7852G: G2 Internal Circuit 1 3 PD LD 2 Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Symbol PO PO(pulse) VR(LD) VR(PD) Topr Ratings 50 60 * 2 30 –10 to +60 –40 to +85 Unit mW mW V V °C °C Storage temperature Tstg Note: Maximum 50% duty cycle, maximum 1 µs pulse width. Optical and Electrical Characteristics (TC = 25°C) Item Threshold current Slope efficiency LD Operating current LD Operating voltage Lasing wavelength Beam divergence (parallel) Beam divergence (perpendicular) Monitor current Astigmatism Symbol Ith ηs IOP VOP λp θ// θ⊥ IS AS Min — 0.35 — — 775 8 18 25 — Typ 45 0.55 135 2.3 785 9.5 23 45 5 Max 70 0.7 165 2.7 795 12 28 150 — Unit mA mW/mA mA V nm ° ° µA µm Test Conditions 40 (mW) / (I(45mW) – I(5mW)) PO = 50 mW PO = 50 mW PO = 50 mW PO = 50 mW, FWHM PO = 50 mW, FWHM PO = 5 mW, VR(PD) = 5 V PO = 5 mW, NA = 0.4 Rev.1 Dec. 04, 2006 ...