2SC1881. C1881 Datasheet

C1881 2SC1881. Datasheet pdf. Equivalent

Part C1881
Description 2SC1881
Feature 2SC1881(K) Silicon NPN Triple Diffused Application www.DataSheet4U.com High gain amplifier power s.
Manufacture Hitachi Semiconductor
Datasheet
Download C1881 Datasheet

2SC1881(K) Silicon NPN Triple Diffused Application www.Data C1881 Datasheet
Recommendation Recommendation Datasheet C1881 Datasheet





C1881
2SC1881(K)
Silicon NPN Triple Diffused
Application
High gain amplifier power switching
www.DataSheet4U.com
Outline
TO-220AB
2
1
23
1. Base
2. Collector
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
1
6.8 k
(Typ)
400
(Typ)
3
Ratings
60
60
7
3
6
30
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C



C1881
2SC1881(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
60
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
I CBO
I CEO
hFE 1000
500
Collector to emitter saturation
voltage
www.DataSheet4U.com
Turn on time
Turn off time
Note: 1. Pulse test.
VCE(sat)
t on
t off
Typ
1
5
Max Unit
—V
—V
0.2 mA
0.4 mA
1.2 V
µs
µs
Test conditions
IC = 50 mA, RBE =
IE = 50 mA, IC = 0
VCB = 60 V, IE = 0
VCE = 30 V, RBE =
VCE = 1.5 V
IC = 1.5 A*1
IC = 2.5 A*1
IC = 2.5 A, IB = 20 mA*1
VCC = 11 V, IC = 2 A,
IB1 = –IB2 = 8 mA
Maximum Collector Dissipation Curve
30
20
10
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
10
iC (peak)
5
IC max
2
1.0
0.5
0.2 Ta = 25°C
0.1 1 shot pulse
0.05
12
5 10 20 50 100
Collector to emitter voltage VCE (V)
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)