C1881 Datasheet: 2SC1881





C1881 2SC1881 Datasheet

Part Number C1881
Description 2SC1881
Manufacture Hitachi Semiconductor
Total Page 6 Pages
PDF Download Download C1881 Datasheet PDF

Features: 2SC1881(K) Silicon NPN Triple Diffused Application www.DataSheet4U.com High g ain amplifier power switching Outline TO-220AB 2 1 1. Base 2. Collector (Fl ange) 3. Emitter 1 2 3 6.8 kΩ (Typ ) 400 Ω (Typ) 3 Absolute Maximum Ra tings (Ta = 25°C) Item Collector to ba se voltage Collector to emitter voltage Emitter to base voltage Collector curr ent Collector peak current Collector po wer dissipation Junction temperature St orage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(p eak) PC * Tj Tstg 1 Ratings 60 60 7 3 6 30 150 –55 to +150 Unit V V V A A W °C °C 2SC1881(K) Electrical Charac teristics (Ta = 25°C) Item Symbol Min 60 7 — — 1000 500 Collector to emit ter saturation voltage Turn on time Tur n off time Note: 1. Pulse test. VCE(sat ) t on t off — — — Typ — — — — — — 1 5 Max — — 0.2 0 .4 — — 1.2 — — V µs µs Unit V V mA mA Test conditions I C = 50 mA, R BE = ∞ I E = 50 mA, IC = 0 VCB = 60 V, IE = 0 VCE = 30 V, RBE = ∞ VCE = 1.5 V I C = 1.5 A*1 I C = 2.5 A*1 I C = .

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2SC1881(K)
Silicon NPN Triple Diffused
Application
High gain amplifier power switching
www.DataSheet4U.com
Outline
TO-220AB
2
1
23
1. Base
2. Collector
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
1
6.8 k
(Typ)
400
(Typ)
3
Ratings
60
60
7
3
6
30
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C

                 






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