DatasheetsPDF.com

TA32910Q

Dynex Semiconductor

Asymmetric Thyristor

TA329..Q TA329..Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2...


Dynex Semiconductor

TA32910Q

File Download Download TA32910Q Datasheet


Description
TA329..Q TA329..Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000 APPLICATIONS s High Frequency Applications s High Power Choppers And Inverters s Welding s Ultrasonic Generators s Induction Heating s 400Hz UPS KEY PARAMETERS VDRM 1400V IT(RMS) 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs www.DataSheet4U.com s PWM Inverters FEATURES s Low Loss Asymmetrical Diffusion Structure s High Interdigitated Amplifying Gate s Gate Assisted Turn-off With Exclusive Bypass Diode s Fully Characterised For Operation up to 40kHz s Directly Compatible With 220-480 A.c. Mains VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage VDRM V 1400 1200 1000 Repetitive Peak Reverse Voltage VRRM V 10 10 10 TA329 14 Q TA329 12 Q TA329 10 Q Lower voltage grades available. Outline type code: MU86. See Package Details for further information. CURRENT AND SURGE RATINGS Symbol Double Side Cooled IT(RMS) ITSM I2t RMS value Surge (non-repetitive) on-state current I2t for fusing Half sine wave, duty cycle 50%, Tcase = 80oC, Tj = 125˚C. Tj = 125oC, tp = 1ms, VR = 0 tp ≥ 10ms 370 2000 20 x 103 A A A2s Parameter Conditions Max. Units 1/10 TA329..Q THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 4.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) stg www.DataSheet4U...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)