2SC6020 Datasheet: NPN Epitaxial Planar Silicon Transistor





2SC6020 NPN Epitaxial Planar Silicon Transistor Datasheet

Part Number 2SC6020
Description NPN Epitaxial Planar Silicon Transistor
Manufacture Sanyo Semicon Device
Total Page 4 Pages
PDF Download Download 2SC6020 Datasheet PDF

Features: Ordering number : ENN8356 2SC6020 2SC6 020 www.DataSheet4U.com Applications NPN Epitaxial Planar Silicon Transis tor DC / DC Converter Applications Re lay drivers, lamp drivers, motor driver s, flash. Features • • • • • • Adoption of FBET and MBIT process es. Large current capacitance. Low coll ector-to-emitter saturation voltage. Hi gh-speed switching. Narrow hFE range. H igh allowable power dissipation. Speci fications Absolute Maximum Ratings at T a=25°C Parameter Collector-to-Base Vol tage Collector-to-Emitter Voltage Emitt er-to-Base Voltage Collector Current Co llector Current (Pulse) Base Current Co llector Dissipation Junction Temperatur e Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Cond itions Ratings 40 30 6 6 9 600 0.8 15 1 50 --55 to +150 Unit V V V A A mA W W C °C Electrical Characteristics at T a=25°C Parameter Collector Cutoff Curr ent Emitter Cutoff Current DC Current G ain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=30V, IE=0A VEB=4.

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Ordering number : ENN8356
2SC6020
2SC6020 NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
www.DataSheetA4Up.cpomlications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of FBET and MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Narrow hFE range.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
Conditions
VCB=30V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=500mA
VCE=10V, IC=500mA
Ratings
40
30
6
6
9
600
0.8
15
150
--55 to +150
Unit
V
V
V
A
A
mA
W
W
°C
°C
min
250
Ratings
typ
max
Unit
0.1 µA
0.1 µA
400
420 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005EA MS IM TB-00001435 No.8356-1/4

           






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