Silicon Transistor. 2SC6022 Datasheet

2SC6022 Transistor. Datasheet pdf. Equivalent

Part 2SC6022
Description NPN Epitaxial Planar Silicon Transistor
Feature Ordering number : ENN8355 2SC6022 2SC6022 www.DataSheet4U.com Applications • NPN Epitaxial Planar.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SC6022 Datasheet

Ordering number : ENN8355 2SC6022 2SC6022 www.DataSheet4U. 2SC6022 Datasheet
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2SC6022
Ordering number : ENN8355
2SC6022
2SC6022 NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
www.DataSheetA4Up.cpomlications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of FBET and MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Narrow hFE range.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
Conditions
VCB=30V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=500mA
VCE=10V, IC=500mA
Ratings
40
30
6
9
12
1.2
1
15
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
min
250
Ratings
typ
max
Unit
0.1 µA
0.1 µA
400
320 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005EA MS IM TB-00001412 No.8355-1/4



2SC6022
2SC6022
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=10V, f=1MHz
IC=2.5A, IB=50mA
IC=4A, IB=200mA
IC=2.5A, IB=50mA
IC=10µA, IE=0A
IC=1mA, RBE=
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Package Dimensions
www.DataSheetu4nUi.tco: mmm
7518-003
6.5
5.0
4
2.3
0.5
Package Dimensions
unit : mm
7003-003
6.5
5.0
4
min
40
30
6
Ratings
typ
40
100
120
0.85
30
320
15
max
150
180
1.2
Unit
pF
mV
mV
V
V
V
V
ns
ns
ns
2.3
0.5
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
OUTPUT
INPUT
50
VR
RB
+
100µF
VBE= --5V
IC=20IB1= --20IB2=2.5A
RL
+
470µF
VCC=12V
IC -- VCE
9
8 100mA 80mA
60mA
7 50mA
6 40mA
30mA
5 20mA
4
10mA
3
5mA
2
1
0 IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT09466
10
VCE=2V
9
IC -- VBE
8
7
6
5
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V IT09467
No.8355-2/4





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