2SC6025 Datasheet: NPN Epitaxial Planar Silicon Transistor





2SC6025 NPN Epitaxial Planar Silicon Transistor Datasheet

Part Number 2SC6025
Description NPN Epitaxial Planar Silicon Transistor
Manufacture Sanyo Semicon Device
Total Page 15 Pages
PDF Download Download 2SC6025 Datasheet PDF

Features: Ordering number : ENN8144 2SC6025 NPN Epitaxial Planar Silicon Transistor 2S C6025 www.DataSheet4U.com Features • • UHF to C Band Low-Noise Amplifier and OSC Applications NF=1.2dB typ (f=2G Hz). fT=14GHz typ (VCE=1V). fT=21GHz ty p (VCE=3V). S21e2=12.5dB typ (f=2 GHz). • • Low-noise use : High cu t-off frequency : : Low operating volta ge. High gain : Specifications Absolut e Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to -Emitter Voltage Emitter-to-Base Voltag e Collector Current Collector Dissipati on Junction Temperature Storage Tempera ture Symbol VCBO VCEO VEBO IC PC Tj Tst g Conditions Ratings 9 3.5 2 35 120 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emi tter Cutoff Current DC Current Gain Gai n-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Tr ansfer Gain Noise Figure Symbol ICBO IE BO hFE fT1 fT2 Cob Cre 2 S21e 1 2 S21e  2 Conditions VCB=5V, IE=0 VEB=1V, .

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Ordering number : ENN8144
2SC6025
2SC6025
NPN Epitaxial Planar Silicon Transistor
UHF to C Band Low-Noise Amplifier
and OSC Applications
www.DataSheetF4Ue.acotmures
Low-noise use
: NF=1.2dB typ (f=2GHz).
High cut-off frequency : fT=14GHz typ (VCE=1V).
: fT=21GHz typ (VCE=3V).
Low operating voltage.
High gain
: S21e2=12.5dB typ (f=2GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
S21e21
S21e22
NF
Conditions
VCB=5V, IE=0
VEB=1V, IC=0
VCE=3V, IC=15mA
VCE=1V, IC=5mA
VCE=3V, IC=15mA
VCB=1V, f=1MHz
VCB=1V, f=1MHz
VCE=1V, IC=5mA, f=2GHz
VCE=3V, IC=15mA, f=2GHz
VCE=1V, IC=5mA, f=2GHz
Ratings
9
3.5
2
35
120
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Ratings
min typ
80
14
18 21
0.55
0.25
9 10.5
12.5
1.2
max
1.0
1
160
0.7
Unit
µA
µA
GHz
GHz
pF
pF
dB
dB
dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005AB TS IM TB-00000433 No.8144-1/15

                    
                    






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