Part Number

2SC6026

Description

Silicon NPN Epitaxial Type Transistor

Manufacture

Toshiba Semiconductor

Total Page 3 Pages
PDF Download
Download 2SC6026 Datasheet PDF


Features Datasheet pdf 2SC6026 TOSHIBA Transistor Silicon NPN E pitaxial Type (PCT Process) 2SC6026 Ge neral-Purpose Amplifier Applications • • • • www.DataSheet4U.com Unit: mm 0.15±0.05 High voltage and h igh current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ. ) 0.6±0.05 0.35±0.05 High hFE Lead (Pb) free : hFE = 120~400 Complementa ry to 2SA2154 1 3 2 0.8±0.05 1.0±0.0 5 0.1±0.05 Maximum Ratings (Ta = 25° C) Characteristic Collector-base voltag e Collector-emitter voltage Emitter-bas e voltage Collector current Base curren t Collector power dissipation Junction temperature Storage temperature range S ymbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 .
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2SC6026 Datasheet
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026
2SC6026
General-Purpose Amplifier Applications
High voltage and high current
: VCEO = 50 V, IC = 100 mA (max)
Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
High hFE
: hFE = 120~400
Complementary to 2SA2154
Lead (Pb) free
www.DataSheet4U.com
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
60
50
5
100
30
50
150
55~150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
DC current gain
hFE (Note) VCE = 6 V, IC = 2 mA
Collector-emitter saturation voltage
VCE (sat) IC = 100 mA, IB = 10 mA
Transition frequency
fT VCE = 10 V, IC = 1 mA
Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE classification Y (F): 120~240, GR (H): 200~400
( ) marking symbol
Marking
Type Name
hFE Rank
Unit: mm
1
3
2 0.8±0.05
1.0±0.05
0.1±0.05
0.1±0.05
1.BASE
fSM
2.EMITTER
3.COLLECTOR
JEDEC
JEITA
TOSHIBA
2-1E1A
Weight: 0.0006 g (typ.)
Min Typ. Max Unit
⎯ ⎯ 0.1 µA
⎯ ⎯ 0.1 µA
120 400
0.1 0.25 V
60 ⎯ ⎯ MHz
0.95
pF
7F
1 2005-03-23




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