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2SC6026 Datasheet, Equivalent, NPN Transistor.

Silicon NPN Transistor

Silicon NPN Transistor

 

 

 

Part 2SC6026
Description Silicon NPN Transistor
Feature 2SC6026 TOSHIBA Transistor Silicon NPN E pitaxial Type (PCT Process) 2SC6026 Ge neral-Purpose Amplifier Applications



• www.
DataSheet4U.
com Unit: mm 0.
15±0.
05 High voltage and h igh current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.
1 mA)/hFE (IC = 2 mA) = 0.
95 (typ.
) 0.
6±0.
05 0.
35±0.
05 High hFE Lead (Pb) free : hFE = 120~400 Complementa ry to 2SA2154 1 3 2 0.
8±0.
05 1.
0±0.
0 5 0.
1±0.
05 Maximum Ratings (Ta = 25° C) Characteristic Collector-base voltag e Collector-emitter voltage Emitter-bas e voltage Collector current Base curren t Collector power dissipation J .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SC6026 Datasheet
Part 2SC6026
Description Silicon NPN Transistor
Feature 2SC6026 TOSHIBA Transistor Silicon NPN E pitaxial Type (PCT Process) 2SC6026 Ge neral-Purpose Amplifier Applications



• www.
DataSheet4U.
com Unit: mm 0.
15±0.
05 High voltage and h igh current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.
1 mA)/hFE (IC = 2 mA) = 0.
95 (typ.
) 0.
6±0.
05 0.
35±0.
05 High hFE Lead (Pb) free : hFE = 120~400 Complementa ry to 2SA2154 1 3 2 0.
8±0.
05 1.
0±0.
0 5 0.
1±0.
05 Maximum Ratings (Ta = 25° C) Characteristic Collector-base voltag e Collector-emitter voltage Emitter-bas e voltage Collector current Base curren t Collector power dissipation J .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SC6026 Datasheet

2SC6026

2SC6026
2SC6026

2SC6026

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