NPN Transistor. 2SC6026 Datasheet

2SC6026 Transistor. Datasheet pdf. Equivalent

Part 2SC6026
Description Silicon NPN Transistor
Feature 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifi.
Manufacture Toshiba Semiconductor
Datasheet
Download 2SC6026 Datasheet

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2SC6026
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026
2SC6026
General-Purpose Amplifier Applications
High voltage and high current
: VCEO = 50 V, IC = 100 mA (max)
Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
High hFE
: hFE = 120~400
Complementary to 2SA2154
Lead (Pb) free
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Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
60
50
5
100
30
50
150
55~150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
DC current gain
hFE (Note) VCE = 6 V, IC = 2 mA
Collector-emitter saturation voltage
VCE (sat) IC = 100 mA, IB = 10 mA
Transition frequency
fT VCE = 10 V, IC = 1 mA
Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE classification Y (F): 120~240, GR (H): 200~400
( ) marking symbol
Marking
Type Name
hFE Rank
Unit: mm
1
3
2 0.8±0.05
1.0±0.05
0.1±0.05
0.1±0.05
1.BASE
fSM
2.EMITTER
3.COLLECTOR
JEDEC
JEITA
TOSHIBA
2-1E1A
Weight: 0.0006 g (typ.)
Min Typ. Max Unit
⎯ ⎯ 0.1 µA
⎯ ⎯ 0.1 µA
120 400
0.1 0.25 V
60 ⎯ ⎯ MHz
0.95
pF
7F
1 2005-03-23



2SC6026
2SC6026
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120
2.0 1.5
100
IC - VCE
1.0
0.7
80 0.5
60 0.3
40
20
0
0
0.2
IB=0.1mA
COMMON EMITTER Ta=25°C
1234567
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
1
COMMON EMITTER
IC/IB = 10
0.1 Ta = 100°C
25
-25
0.01
0.1
1 10
COLLECTOR CURRENT IC (mA)
100
1000
IB - VBE
100
Ta = 100°C
10
25
-25
1
0.1
0
COMMON EMITTER
VCE = 6V
0.2 0.4 0.6 0.8 1 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
1000
hFE - IC
Ta = 100°C 25
100 -25
10
0.1
COMMON EMITTER
   VCE = 6V
   VCE = 1V
1 10
COLLECTOR CURRENT IC (mA)
100
VBE(sat) - IC
10
COMMON EMITTER
IC/ IB = 10
25
1 -25
Ta = 100°C
0.1
0.1
1 10
COLLECTOR CURRENT IC (mA)
100
100
90
80
70
60
50
40
30
20
10
0
0
PC - Ta
Mounted on FR4 board
     (10 mm × 10 mm × 1 mmt)
20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
2 2005-03-23





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