NPN Transistor. 2SC6026MFV Datasheet

2SC6026MFV Transistor. Datasheet pdf. Equivalent

Part 2SC6026MFV
Description Silicon NPN Transistor
Feature 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose A.
Manufacture Toshiba Semiconductor
Datasheet
Download 2SC6026MFV Datasheet

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PC 2SC6026MFV Datasheet
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2SC6026MFV
2SC6026MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026MFV
General-Purpose Amplifier Applications
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High voltage and high current
: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity :
hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
High hFE
: hFE = 120~400
Complementary to 2SA2154MFV
Lead (Pb) - free
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Collector-base voltage
VCBO
60
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
5
Collector current
IC 150
Base current
IB 30
Collector power dissipation
PC 150*
Junction temperature
Tj 150
Storage temperature range
Tstg 55~150
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mm)
Mount Pad Dimensions (Reference)
0.5
0.45
1.15
0.4
0.45
0.4 0.4
Unit: mm
Unit
V
V
V
mA
mA
mW
°C
°C
Unit: mm
1.2 ± 0.05
0.80 ± 0.05
1
1
3
2
VESM
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
JEITA
TOSHIBA
2-1L1A
Weight: 0.0015 g (typ.)
1 2005-06-28



2SC6026MFV
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
DC current gain
hFE (Note) VCE = 6 V, IC = 2 mA
Collector-emitter saturation voltage
VCE (sat) IC = 100 mA, IB = 10 mA
Transition frequency
fT VCE = 10 V, IC = 1 mA
Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE classification Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
www.DataSheet4U.comMarking
Type Name
hFE Classification
HY
2SC6026MFV
Min Typ. Max Unit
⎯ ⎯ 0.1 µA
⎯ ⎯ 0.1 µA
120 400
0.1 0.25 V
60 ⎯ ⎯ MHz
0.95
3
pF
2 2005-06-28





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