DatasheetsPDF.com

D2103

Hitachi Semiconductor

2SD2103

2SD2103 Silicon NPN Triple Diffused www.DataSheet4U.com Application Low frequency power amplifier Outline TO-220FM 2...


Hitachi Semiconductor

D2103

File Download Download D2103 Datasheet


Description
2SD2103 Silicon NPN Triple Diffused www.DataSheet4U.com Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 2.2 kΩ (Typ) 3 2SD2103 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current www.DataSheet4U.com Symbol VCBO VCEO VEBO IC IC(peak) PC PC* 1 Rating 60 60 7 8 12 2 25 150 –55 to +150 Unit V V V A A W Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 60 60 7 — — 1000 — — — — Typ — — — — — — — — — — Max — — — 10 10 20000 1.5 3.0 2.0 3.5 V V Unit V V V µA Test conditions IC = 0.1 mA, IE = 0 IC = 25 mA, RBE = ∞ IE = 50 mA, IC = 0 VCB = 50 V, IE = 0 VCE = 50 V, RBE = ∞ VCE = 3 V, IC = 4 A* 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. hFE VCE(sat)1 ICE(sat)2 VBE(sat)1 VBE(sat)2 IC = 4 A, IB = 8 mA* IC = 4 A, IB = 8 mA* 1 IC = 8 A, IB = 80 mA* 1 1 IC = 8 A, IB = 80 mA* 1 See switching characteristic curve of 2SD1572. 2 2SD2103 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 20 10 www.DataSheet4U.com 0 50 100 C...




Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)