11N06LT Datasheet: PHB11N06LT





11N06LT PHB11N06LT Datasheet

Part Number 11N06LT
Description PHB11N06LT
Manufacture NXP Semiconductors
Total Page 9 Pages
PDF Download Download 11N06LT Datasheet PDF

Features: Philips Semiconductors Product specific ation TrenchMOS™ transistor Logic le vel FET FEATURES • ’Trench’ techn ology • Very low on-state resistance • Fast switching • Stable off-state characteristics www.DataSheet4U.com High thermal cycling performance • Low thermal resistance PHB11N06LT, PHD 11N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 11 A g s RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 m Ω (VGS = 10 V) GENERAL DESCRIPTION N -channel enhancement mode, logic level, field-effect power transistor in a pla stic envelope using ’trench’ techno logy. The device has very low on-state resistance. It is intended for use in d c to dc converters and general purpose switching applications. The PHB11N06LT is supplied in the SOT404 surface mount ing package. The PHD11N06LT is supplied in the SOT428 surface mounting package . PINNING PIN 1 2 3 tab gate drain 1 s ource DESCRIPTION SOT428 tab SOT404 t ab 2 2 3 drain 1 1 3 LIMITING VALUES Limiting values in accordance with the Absolute M.

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Philips Semiconductors
TrenchMOStransistor
Logic level FET
Product specification
PHB11N06LT, PHD11N06LT
FEATURES
’Trench’ technology
• Very low on-state resistance
• Fast switching
www.DataSheetS4Uta.cbolme off-state characteristics
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 55 V
ID = 11 A
RDS(ON) 150 m(VGS = 5 V)
RDS(ON) 130 m(VGS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching
applications.
The PHB11N06LT is supplied in the SOT404 surface mounting package.
The PHD11N06LT is supplied in the SOT428 surface mounting package.
PINNING
PIN DESCRIPTION
1 gate
SOT428
tab
SOT404
tab
2 drain 1
3 source
tab drain
2
13
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
± 13
11
7.6
44
36
175
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make contact to pin 2 of the SOT404 or SOT428 package
September 1998
1
Rev 1.000

                    
     






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