G4PC30F BIPOLAR TRANSISTOR Datasheet

G4PC30F Datasheet, PDF, Equivalent


Part Number

G4PC30F

Description

INSULATED GATE BIPOLAR TRANSISTOR

Manufacture

International Rectifier

Total Page 8 Pages
Datasheet
Download G4PC30F Datasheet


G4PC30F
PD 91459B
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30F
Fast Speed IGBT
Features
Fast: Optimized for medium operating
www.DataSheet4U.com frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
31
17
120
120
± 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
1.2
–––
40
–––
Units
°C/W
g (oz)
1
1229//00

G4PC30F
IRG4PC30F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
www.DataSheet4U.com
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
Conditions
600 — — V VGE = 0V, IC = 250µA
18 — — V VGE = 0V, IC = 1.0A
0.69 V/°C VGE = 0V, IC = 1.0mA
1.59 1.8
IC = 17A
VGE = 15V
1.99 V IC = 31A
See Fig.2, 5
1.7
IC = 17A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-11 mV/°C VCE = VGE, IC = 250µA
6.1 10 S VCE = 100V, IC = 17A
— — 250 µ A VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
51 77
IC = 17A
7.9 12
19 28
nC VCC = 400V
VGE = 15V
See Fig. 8
21
15 ns TJ = 25°C
200 300
IC = 17A, VCC = 480V
180 270
VGE = 15V, RG = 23
0.23
Energy losses include "tail"
1.18 mJ See Fig. 10, 11, 13, 14
1.41 2.0
20
TJ = 150°C,
16
290
ns IC = 17A, VCC = 480V
VGE = 15V, RG = 23
350
Energy losses include "tail"
2.5 mJ See Fig. 13, 14
13 nH Measured 5mm from package
1100
VGE = 0V
74
14
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
www.irf.com


Features PD 91459B IRG4PC30F INSULATED GATE BIPO LAR TRANSISTOR Features www.DataSheet4U .com C Fast Speed IGBT • Fast: Opti mized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distr ibution and higher efficiency than Gene ration 3 • Industry standard TO-247AC package VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channe l Benefits • Generation 4 IGBT's off er highest efficiency available • IGB T's optimized for specified application conditions • Designed to be a "drop- in" replacement for equivalent industry -standard Generation 3 IR IGBT's TO-24 7AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitt er Breakdown Voltage Continuous Collect or Current Continuous Collector Current Pulsed Collector Current Q Clamped Ind uctive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy .
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