NPN Transistor. 2SD2103 Datasheet

2SD2103 Transistor. Datasheet pdf. Equivalent

Part 2SD2103
Description Silicon NPN Transistor
Feature 2SD2103 Silicon NPN Triple Diffused www.DataSheet4U.com Application Low frequency power amplifier .
Manufacture Hitachi Semiconductor
Datasheet
Download 2SD2103 Datasheet

2SD2103 Silicon NPN Triple Diffused www.DataSheet4U.com Ap 2SD2103 Datasheet
Recommendation Recommendation Datasheet 2SD2103 Datasheet





2SD2103
2SD2103
Silicon NPN Triple Diffused
www.DataSheet4U.com
Application
Low frequency power amplifier
Outline
TO-220FM
123
1. Base
2. Collector
3. Emitter
1
2.2 k
(Typ)
2
3



2SD2103
2SD2103
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
www.DataSheet4U.com Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
PC
PC*1
Tj
Tstg
Rating
60
60
7
8
12
2
25
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO
voltage
60
Collector to emitter breakdown V(BR)CEO
voltage
60
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Note: 1. Pulse test.
ICBO
ICEO
hFE
VCE(sat)1
ICE(sat)2
VBE(sat)1
VBE(sat)2
1000
Typ
Max
Unit
V
Test conditions
IC = 0.1 mA, IE = 0
—V
IC = 25 mA, RBE =
—V
IE = 50 mA, IC = 0
10 µA
10
20000
1.5 V
3.0
2.0 V
3.5
VCB = 50 V, IE = 0
VCE = 50 V, RBE =
VCE = 3 V, IC = 4 A*1
IC = 4 A, IB = 8 mA*1
IC = 8 A, IB = 80 mA*1
IC = 4 A, IB = 8 mA*1
IC = 8 A, IB = 80 mA*1
See switching characteristic curve of 2SD1572.
2





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