2SD2103 Datasheet: Silicon NPN Triple Diffused





2SD2103 Silicon NPN Triple Diffused Datasheet

Part Number 2SD2103
Description Silicon NPN Triple Diffused
Manufacture Hitachi Semiconductor
Total Page 5 Pages
PDF Download Download 2SD2103 Datasheet PDF

Features: 2SD2103 Silicon NPN Triple Diffused www .DataSheet4U.com Application Low frequ ency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 2.2 kΩ (Typ) 3 2SD2103 Absolut e Maximum Ratings (Ta = 25°C) Item Col lector to base voltage Collector to emi tter voltage Emitter to base voltage Co llector current Collector peak current www.DataSheet4U.com Symbol VCBO VCEO V EBO IC IC(peak) PC PC* 1 Rating 60 60 7 8 12 2 25 150 –55 to +150 Unit V V V A A W Collector power dissipation Junction temperature Storage temperatur e Note: 1. Value at TC = 25°C. Tj Tst g °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base bre akdown voltage Symbol V(BR)CBO Min 60 6 0 7 — — 1000 — — — — Typ — — — — — — — — — M ax — — — 10 10 20000 1.5 3.0 2.0 3.5 V V Unit V V V µA Test conditions IC = 0.1 mA, IE = 0 IC = 25 mA, RBE = IE = 50 mA, IC = 0 VCB = 50 V, IE = 0 VCE = 50 V, RBE = ∞ VCE = 3 V, IC = 4 A* 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base bre.

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2SD2103
Silicon NPN Triple Diffused
www.DataSheet4U.com
Application
Low frequency power amplifier
Outline
TO-220FM
123
1. Base
2. Collector
3. Emitter
1
2.2 k
(Typ)
2
3

              






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