WTC2303

WTC2303 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -1.9 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE www.DataSheet4U.com Features: SOURCE 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <240mΩ@V GS =-10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Unless Otherwise Specified) Symbol VDS VGS Value -30 ±20 -1.9 -1.5 -10 1.38 90 -55~+150 Unit V ,(T A ,(T A ID I DM PD R θJA TJ , Tstg A Pulsed Drain Current 1,2 Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range W ˚C/W ˚C Device Marking WTC2303=2303 http:www.weitron.com.tw WEITRON 1/6 16-May-05 WTC2303 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250μA www.DataSheet4U.com Gate-Source Threshold Voltage VDS =VGS ,I D =-250 μA Gate-Source Leakage Current VGS = ±20V Drain- Sou rce Leakage Current(Tj=25˚C) VDS =-30V,V GS =0 Drain- Sou rce Leakage Current(Tj=70˚C) VDS =-30V,V GS =0 Drain-Source On-Resistance 2 VGS =-10V,I D=-1.7A VGS =-4.5V,I D=-1.3A Forward Transconductance VDS =-10V, ID =-1.7A g fs R DS(o n) 2 240 460 mΩ I DSS -10 V(BR)DSS VGS(Th) I GSS -30 -1.0 V ±100 -1 μA ...