WTC2305

WTC2305 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(T A Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R θJA TJ , Tstg Value -30 ±12 -4.2 -30 1.4 140 -55~+150 Unit V A Pulsed Drain Current 1,2 Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3 www.DataSheet4U.com W ˚C /W ˚C Operating Junction and Storage Temperature Range Device Marking WTC2305= http//:www.weitron.com.tw WEITRON 1/4 Rev.B 05-Jun-09 WTC2305 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250μA Gate-Source Threshold Voltage VDS =VGS ,I D =-250 μA Gate-Source Leakage C urrent VGS = ±12V Drain- Source Leakage Current(Tj=25˚C) VDS =-24V,V GS =0 Drain-Source On-Resistance 2 VGS=-10V,ID=-4.2A VGS=-4.5V,ID=-4.0A VGS=-2.5V,ID=-1.0A Forward Transconductance VDS =-5.0V, ID =-5.0A R DS(o n) 7 53 64 86 11 70 85 130 mΩ S V(BR)DSS VGS(Th) I GSS I DSS -30 -0.7 V -1.3 ±100 nA - - -1 μA g fs Dynamic Total Gate Charge VDS = -15V, ID ...