Enhancement Mode Power MOSFET
WTC2305
P-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLT...
Description
WTC2305
P-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOURCE
2
3 1 2
SOT-23
Applications
*Power Management in Notebook Computer *Portable Equipment *Battery Powered System
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(T A
Unless Otherwise Specified) Symbol
VDS VGS ID I DM PD R θJA TJ , Tstg
Value
-30 ±12 -4.2 -30 1.4 140 -55~+150
Unit
V
A
Pulsed Drain Current
1,2
Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3
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W ˚C /W ˚C
Operating Junction and Storage Temperature Range
Device Marking
WTC2305=
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WEITRON
1/4
Rev.B 05-Jun-09
WTC2305
Electrical Characteristics (TA = 25℃
Characteristic Unless otherwise noted) Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage VGS =0,I D =-250μA Gate-Source Threshold Voltage VDS =VGS ,I D =-250 μA Gate-Source Leakage C urrent VGS = ±12V Drain- Source Leakage Current(Tj=25˚C) VDS =-24V,V GS =0 Drain-Source On-Resistance 2 VGS=-10V,ID=-4.2A VGS=-4.5V,ID=-4.0A VGS=-2.5V,ID=-1.0A Forward Transconductance VDS =-5.0V, ID =-5.0A R DS(o n) 7 53 64 86 11 70 85 130 mΩ S V(BR)DSS VGS(Th) I GSS I DSS -30 -0.7 V -1.3 ±100 nA
-
-
-1
μA
g fs
Dynamic
Total Gate Charge VDS = -15V, ID ...
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