WTC2306A

WTC2306A N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE www.DataSheet4U.com Features: SOURCE 2 3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Con tinuous Drain Current 3 ,V GS @4.5V(T A ,V GS @4.5V(T A Pulsed Drain Current 1,2 Unless Otherwise Specified) Symbol VDS VGS ID IDM PD R θJA TJ , Tstg Value 30 ± 12 5 4 20 1.38 90 - 55~+150 Unit V A Total Power Dissipation(T A =25 ˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range W ˚C/W ˚C Device Marking WTC2306A=2306A http:www.weitron.com.tw WEITRON 1/6 13-May-05 WTC2306A Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static www.DataSheet4U.com VGS =0,ID =250μA Drain-Source Breakdown Voltage Gate-Source Threshold Voltage VDS =VGS ,ID =250μA Gate-Source Leakage Current VGS=±20V Drain- Sou rce Leakage Current(Tj=25˚C) VDS =30V,VGS =0 V(BR)DSS VGS(Th) IGSS 30 0.5 - - V 1.2 ±100 1 μA 25 nA Drain- Sou rce Leakage Current(Tj=70˚C) VDS =24V,VGS =0 Drain-Source On-Resistance VGS =10V,ID=5A VGS =4.5V,I D=5A VGS =2.5V,I D=2.6A VGS =1.8V,I D=1.0A Forward Transconductance VDS =5 V,ID =5A IDSS - R DS(o n) - 13 30 35 50 90 - mΩ g fs S Dynamic Input Capacitance VGS =0V,VDS =25V,f...