Document
WTC2307
P-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT -4.0 AMPERS DRAIN SOUCE VOLTAGE -16 VOLTAGE
www.DataSheet4U.com
Features:
SOURCE
2
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS=-4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
3 1 2
SOT-23
Applications
*Power Management in Notebook Computer *Portable Equipment *Battery Powered System
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Con tinuous Drain Current 3 (TA=25˚C) (TA=70˚C) Pulsed Drain Current
1
Unless Otherwise Specified) Symbol
VDS VGS ID I DM
Value
-16 ±8 -4.0 -3.3 -12 1.38 90 -55~+150
Unit
V
A
Total Power Dissipation
(TA=25˚C)
PD R θJA TJ , Tstg
W ˚C/W ˚C
Maximum (Thermal Resistance) Junction-ambient 3 Operating Junction and Storage Temperature Range 3
Device Marking
WTC2307=2307
http:www.weitron.com.tw
WEITRON
1/6
16-May-05
WTC2307
Electrical Characteristics (TA = 25℃
Characteristic Unless otherwise noted) Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage VGS =0,I D =-250μA www.DataSheet4U.com Gate-Source Threshold Voltage VDS =VGS ,I D =-250 μA Gate-Source Leakage Current VGS = ±8 V Drain- Sou rce Leakage Cu rrent(Tj=25˚C) VDS =-16V,V GS =0 Drain- Sou rce Leakage Cu rrent(Tj=70˚C) VDS =-12V,V GS =0 Drain-Source On-Resistance 2 VGS =-4.5V,I D=-4.0A VGS =-2.5V,I D=-3.0A Forward Transconductance VDS =-5.0V, ID =-4.0A g fs R DS(o n) 12 60 70 mΩ I DSS -25 V(BR)DSS VGS(Th) I GSS -16 V -1.0 ±100 -1 μA nA
S
Dynamic
Input Capacitance VGS =0V,VDS =-15V,f=1.0MHz Output Capacitance VGS =0V,VDS =-15V,f=1.0MHz Reverse Transfer Capacitance VGS =0V,VDS =-15V,f=1.0MHz C iss C oss C rss 985 180 160 1580 pF
http:www.weitron.com.tw
WEITRON
2/6
16-May-05
WTC2307
Switching
Turn-on Delay Time 2 VDS =-10V,V GS =-10V,I D=-1A,R D=10Ω ,R G =3.3Ω Rise Time VDS =-10V,V GS =-10V,I D=-1A,R D=10Ω ,R G =3.3Ω Turn-off De lay Time VDS =-10V,V GS =-10V,I D=-1A,R D=10Ω ,R G =3.3Ω www.DataSheet4U.com Fall Time VDS =-10V,V GS =-10V,I D=-1A,R D=10Ω ,R G =3.3Ω Total Gate Charge 2 VDS =-12V,VGS =-4.5V,ID=-4.0A Gate-Source C harge VDS =-12V,VGS =-4.5V,ID=-4.0A Gate-Drain C hange VDS =-12V,VGS =-4.5V,ID=-4.0A t d (on) 8 11 54 36 15 1.3 4 ns t d (off) 24 nC
tr
tf
Qg Q gs Q gd
Source-Drain Diode Characteristics
Forward On Voltage 2
VGS =0V,IS =-1.2A
VSD
-
39 26
- 1.2 -
V ns nC
Reverse Recovery Time2 VGS =0V,IS =-4.0A,dl/dt=100A/µs Reverse Recovery Charge VGS =0V,IS =-4.0A,dl/dt=100A/µs
T rr Q rr
Note: 1. Pulse width limited by Max, junction temperature. 2. pulse width≦300μs, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad.
http:www.weitron.com.tw
WEITRON
3/6
16-May-05
WTC2307
16 14
TA=25°C
-5.0V -4.5V -3.0V
16 14
T A =150 °C
-5.0V -4.5V -3.0V -2.5V
-I D ,DRAIN CURRENT (A)
10 8 6
4
VG = -1.8V
I D ,Drain Current (A)
12
-2.5V
12 10 8 6
4
VG = -1.8V
www.DataSheet4U.com
2 0
0 1 2 3 4 5 6
2 0
0 2 4 6 8
FIG.1 Typical Output Characteristics
70 1.6
-V DS ,DRAIN-TO-SOURCE VOLTAGE(V)
Fig.2 Typical Output Characteristics
V DS ,Drain-to-source Voltage(V)
ID = -3A TA = 25°C Normalized RDs(on)
60
1.4
ID = -4A VG = -4.5V
1.2
RDS(ON) (mΩ)
1.0
50
0.8
40
1
Fig.3 On-Resistance v.s. Gate Voltage
3
2.0
-VGS ,Gate-to-source Voltage(V)
3
5
7
9
0.6 -50
0
50
100
150
Fig.4 Normalized On-Resistance
Tj ,Junction Temperature(°C)
2
Tj = 150°C
Normalized-VGS(th)(V)
1
1.5
Tj = 25°C - Is(A)
1
1.0
0.5
0
0
Fig.5 Forward Characteristics of Reverse Diode
-VDS ,Source-to-Drain Voltage(V)
0.2
0.4
0.6
0.8
0.0 -50
Fig.6 Gate Threshold Voltage v.s. Junction Temperature
Tj ,Junction Temperature(°C)
0
50
100
150
WEITRON
http://www.weitron.com.tw
4/6
16-May-05
WTC2307
8
10000
-VGS , Gate to Source Voltage(V)
I D = -4A
6
f = 1.0MHz
VDS = -16V
4
C(pF)
1000
Ciss
www.DataSheet4U.com 2
Coss Crss 1 5 9 13 17
0
0
8
16
24
32
0
Fig 7. Gate Charge Characteristics
100
Q G , Total Gate Charge(nC)
-VDS, Drain-to-Source Voltage(V)
Fig 8. Typical Capacitance Characteristics
1 Duty factor = 0.5 0.2 0.1 0.1 0.05
PDM
10
1ms
1
Normalized Thermal Response(R ja)
-I D(A)
10ms
0.1
t T
100ms TA = 25°C Single Pulse Is DC
1 10 100
0.01
0.01
Single pulse
Duty factor = t / T Peak Tj=PDM x R ja + Ta R ja=270°C / W
0.01
0.1
-VDS , Drain-to-Source Voltage(V)
0.001 0.0001
0.001
0.01
t, Pulse Width(s)
0.1
1.0
10
100
1000
Fig 9. Maximum Safe Operation Area
VDS
90%
Fig 10. Effective Transient Thermal Impedance
VG QG
-4.5V
QGS
10%
QGD
VGS td(on) tr td(off) tf Charge Q
Fig.11 Switching Time Waveform
Fig.12 Gate Charge Waveform
WEITRON
http://www.weitron.com.tw
5/6
16-May-05
WTC2307
SOT-23 Outline Dimension
SOT-23
A
www.DataSheet4U.com
TOP VIEW D E G H
B
C
K J L M
Dim A B C D E G H J K L M
Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076
Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25
WEITRON
http://www.weitron.com.