C5423 Datasheet PDF Download, Panasonic





(PDF) C5423 Datasheet Download

Part Number C5423
Description 2SC5423
Manufacture Panasonic
Total Page 2 Pages
PDF Download Download C5423 Datasheet PDF

Features: Power Transistors 2SC5423 Silicon NPN t riple diffusion mesa type For horizonta l deflection output 15.5±0.5 4.5 Unit : mm q q q High breakdown voltage, a nd high reliability through the use of a glass passivation layer High-speed sw itching Wide area of safe operation (AS O) (TC=25˚C) Ratings 1700 1700 600 5 3 0 15 10 100 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Featur es φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 www.DataSh eet4U.com 5° 18.6±0.5 5° 5° s Ab solute Maximum Ratings Parameter Collec tor to base voltage Collector to emitte r voltage Emitter to base voltage Peak collector current Collector current Bas e current Collector power TC=25°C diss ipation Ta=25°C Junction temperature S torage temperature Symbol VCBO VCES VCE O VEBO ICP IC IB PC Tj Tstg 4.0 2.0±0 .2 1.1±0.1 2.0 0.7±0.1 5.45±0.3 3 .3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 5 ° 1 2 3 2.0 1:Base 2:Collector 3: Emitter TOP–3E Full Pack Package s Electrical Characteristics Parameter Collector cutoff c.

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Power Transistors
2SC5423
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
www.DataSheet4U.com
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
1700
1700
600
5
30
15
10
100
3.5
V
V
V
V
A
A
A
W
Junction temperature
Storage temperature
Tj 150 ˚C
Tstg –55 to +150 ˚C
15.5±0.5
φ3.2±0.1
3.0±0.3
5° 5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Collector cutoff current
ICBO
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
Conditions
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 10A
IC = 10A, IB = 2.8A
IC = 10A, IB = 2.8A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 12A, IB1 = 2.4A, IB2 = –4.8A
min typ max Unit
50 µA
1 mA
50 µA
5 12
3V
1.5 V
3 MHz
2.5 µs
0.2 µs
1

     






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