2SC6075 Datasheet PDF Download, Toshiba Semiconductor





(PDF) 2SC6075 Datasheet Download

Part Number 2SC6075
Description Silicon NPN Epitaxial Type Transistor
Manufacture Toshiba Semiconductor
Total Page 5 Pages
PDF Download Download 2SC6075 Datasheet PDF

Features: 2SC6075 TOSHIBA Transistor Silicon NPN E pitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applicatio ns Low collector emitter saturation vol tage : VCE (sat) = 0.5 V (max)(IC = 1 A) High-speed switching: tstg = 0.4 s (typ) www.DataSheet4U.com Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage C ollector-emitter voltage Emitter-base v oltage Collector current Base current C ollector power dissipation Junction tem perature Storage temperature range DC P ulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 160 160 80 9 2.5 5 .0 1.0 1.3 150 −55~150 Unit V V V V A A A W °C °C 1 : EMITTER 2 : COLLEC TOR 3 : BASE JEDEC JEITA TOSHIBA Weigh t:0.55g(typ) ― ― 2-8M1A Note: Usi ng continuously under heavy loads (e.g. the application of high temperature/cu rrent/voltage and the significant chang e in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/curr.

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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6075
2SC6075
Power Amplifier Applications
Power Switching Applications
Unit: mm
Low collector emitter saturation voltage
: VCE (sat) = 0.5 V (max)IC = 1A
High-speed switching: tstg = 0.4 μs (typ)
www.DataSheetA4Ub.csomolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
160
160
80
9
2.5
5.0
1.0
1.3
150
55150
V
V
V
V
A
A
A
W
°C
°C
1 : EMITTER
2 : COLLECTOR
3 : BASE
JEDEC
JEITA
TOSHIBA
2-8M1A
Weight:0.55g(typ)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2007-06-07

              






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