NPN Transistor. 2SC6075 Datasheet

2SC6075 Transistor. Datasheet pdf. Equivalent

Part 2SC6075
Description Silicon NPN Transistor
Feature 2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Sw.
Manufacture Toshiba Semiconductor
Datasheet
Download 2SC6075 Datasheet

2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC60 2SC6075 Datasheet
Recommendation Recommendation Datasheet 2SC6075 Datasheet





2SC6075
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6075
2SC6075
Power Amplifier Applications
Power Switching Applications
Unit: mm
Low collector emitter saturation voltage
: VCE (sat) = 0.5 V (max)IC = 1A
High-speed switching: tstg = 0.4 μs (typ)
www.DataSheetA4Ub.csomolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
160
160
80
9
2.5
5.0
1.0
1.3
150
55150
V
V
V
V
A
A
A
W
°C
°C
1 : EMITTER
2 : COLLECTOR
3 : BASE
JEDEC
JEITA
TOSHIBA
2-8M1A
Weight:0.55g(typ)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2007-06-07



2SC6075
Electrical Characteristics (Ta = 25°C)
2SC6075
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
www.DataSheet4U.com
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Rise time
Switching time Storage time
Fall time
Symbol
Test Conditions
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat) (1)
VCE (sat) (2)
VBE (sat)
VCB = 160 V, IE = 0
VEB = 9 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 1 mA
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1 A
IC = 0.5 A, IB = 50 mA
IC = 1 A, IB = 100 mA
IC = 1 A, IB = 100 mA
fT VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0,f = 1MHZ
tr
20 μs
Input IB1
Output
tstg IB2
VCC = 24 V
tf IB1 = −IB2 = 100 mA
Duty cycle 1%
Min Typ. Max Unit
― ― 1 μA
― ― 1 μA
80 ― ― V
150
180 450
100
― ― 0.3 V
― ― 0.5 V
― ― 1.5 V
150 MHZ
14 pF
0.05
0.4 μs
0.15
Marking
C6075
Part No. (or abbreviation code)
Lot code
A line indicates
lead (Pb)-free
package or
lead (Pb)-free finish.
2 2007-06-07





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