NPN Transistor. 2SC6076 Datasheet

2SC6076 Transistor. Datasheet pdf. Equivalent

Part 2SC6076
Description Silicon NPN Transistor
Feature 2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applica.
Manufacture Toshiba Semiconductor
Datasheet
Download 2SC6076 Datasheet

2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT P 2SC6076 Datasheet
isc Silicon NPN Power Transistor 2SC6076 DESCRIPTION ·Coll 2SC6076 Datasheet
Recommendation Recommendation Datasheet 2SC6076 Datasheet





2SC6076
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6076
Power Amplifier Applications
Power Switching Applications
2SC6076
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A
High-speed switching: tstg = 0.4 μs (typ)
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO 160 V
Collector-emitter voltage
VCEX 160 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
Collector current
VEBO 9 V
DC IC
3A
Pulse
ICP
5A
1 : BASE
2 : COLLECTORHEAT SINK
3 : EMITTER
Base current
IB 1.5 A
Collector power dissipation Tc = 25
PC
10 W
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55150
°C
JEDEC
JEITA
TOSHIBA
2-7J1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight:0.36g(typ)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-16



2SC6076
Electrical Characteristics (Ta = 25°C)
2SC6076
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
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Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Rise time
Switching time Storage time
Fall time
Symbol
Test Conditions
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat) (1)
VCE (sat) (2)
VBE (sat)
VCB = 160 V, IE = 0
VEB = 9 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 1 mA
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1 A
IC = 0.5 A, IB = 50 mA
IC = 1 A, IB = 100 mA
IC = 1 A, IB = 100 mA
fT VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0,f = 1MHZ
tr
20 μs
Input IB1
Output
tstg IB2
VCC = 24 V
tf IB1 = −IB2 = 100 mA
Duty cycle 1%
Min Typ. Max Unit
― ― 1.0 μA
― ― 1.0 μA
80 ― ― V
150
180 450
100
― ― 0.3 V
― ― 0.5 V
― ― 1.5 V
150 MHZ
14 pF
0.05
0.4 μs
0.15
Marking
C6076
Part No. (or abbreviation code)
Lot code
A line indicates
lead (Pb)-free
package or
lead (Pb)-free finish.
2 2006-11-16





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