2SC6076 Datasheet PDF Download, Toshiba Semiconductor





(PDF) 2SC6076 Datasheet Download

Part Number 2SC6076
Description Silicon NPN Epitaxial Type Transistor
Manufacture Toshiba Semiconductor
Total Page 5 Pages
PDF Download Download 2SC6076 Datasheet PDF

Features: 2SC6076 TOSHIBA Transistor Silicon NPN E pitaxial Type (PCT Process) 2SC6076 Po wer Amplifier Applications Power Switch ing Applications Low collector saturati on voltage: VCE (sat) = 0.5 V (max)(I C = 1A) High-speed switching: tstg = 0.4 μs (typ) www.DataSheet4U.com Unit : mm Absolute Maximum Ratings (Ta = 25 °C) Characteristic Collector-base volt age Collector-emitter voltage Collector -emitter voltage Emitter-base voltage C ollector current Base current Collector power dissipation Junction temperature Storage temperature range Tc = 25℃ D C Pulse Symbol VCBO VCEX VCEO VEBO IC I CP IB PC Tj Tstg Rating 160 160 80 9 3 5 1.5 10 150 −55~150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTOR HEAT SINK) 3 : EMITTER JEDEC JEITA TOSHIBA ― ― 2-7J1A Weight:0.36g(t yp) Note: Using continuously under heav y loads (e.g. the application of high t emperature/current/voltage and the sign ificant change in temperature, etc.) ma y cause this product to decrease in the reliability significantly even if the operati.

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6076
Power Amplifier Applications
Power Switching Applications
2SC6076
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A
High-speed switching: tstg = 0.4 μs (typ)
www.DataSheet4U.com
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO 160 V
Collector-emitter voltage
VCEX 160 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
Collector current
VEBO 9 V
DC IC
3A
Pulse
ICP
5A
1 : BASE
2 : COLLECTORHEAT SINK
3 : EMITTER
Base current
IB 1.5 A
Collector power dissipation Tc = 25
PC
10 W
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55150
°C
JEDEC
JEITA
TOSHIBA
2-7J1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight:0.36g(typ)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-16

              






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