TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01F
SSM3K01F
High Speed Switching Applications
Unit: mm
Small package Low on resistance : Ron = 120 mΩ (max) (VGS = 4 V)
: Ron = 150 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6 to 1.1 V (VDS = 3 V, ID = 0.1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Sy...
