SSM3K03FV

SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.13±0.05 Unit: mm 2.5 V gate drive 1.2±0.05 0.8±0.05 High input impedance Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note 1) Tch Tstg Rating 20 10 100 150 150 −55~150 Unit V V mA mW °C °C 0.5±0.05 0.4 Low gate threshold voltage: Vth = 0.7~1.3 V www.DataSheet4U.com Optimum for high-density mounting in small packages 0.4 1 1.Gate 2.Source 3.Drain VESM JEDEC ― Note: JEITA ― Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2L1B high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 1.5 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 0.5mm 0.45mm 0.45mm 0.4mm Marking 3 Equivalent Circuit 120 3 DA 1 2 1 2 ...