SSM3K310T

SSM3K310T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K310T High-Speed Switching Applications 1.5 V drive Low ON-resistance: Ron = 66 mΩ (max) (@VGS = 1.5 V) Ron = 43 mΩ (max) (@VGS = 1.8 V) Ron = 32 mΩ (max) (@VGS = 2.5 V) Ron = 28 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ± 10 V Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range ID 5.0 A IDP 10.0 PD (Note 1) 700 mW Tch 150 °C Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 １ ２ ３ 2.9±0.2 1.9±0.2 0.95 0.95 0～0.1 0.15 0.16±0.05 0.7±0.05 TSM 1.GATE 2.SOURCE 3.DRAIN JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10 mg (typ.) Electri...