SSM3K7002FU

SSM3K7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K7002FU High Speed Switching Applications Analog Switch Applications Small package Low ON resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V) Unit: mm 2.1± 0.1 1.25 ± 0.1 +0.1 0.3 - 0 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGSS ± 20 V Drain current DC Pulse ID 200 mA IDP 800 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6mm2 × 3) 1 2 3 0~0.1 +0.1 0.15 -0.05 0.9 ± 0.1 0.7 USM JEDEC JEITA TOSHIBA 1. GATE 2. SOURCE 3. DRAIN ⎯ SC-70 2-2E1E 0.6 mm 1...