2N6051 Datasheet | (2N6051 / 2N6052) PNP DARLINGTON POWER SILICON TRANSISTOR





(Datasheet) 2N6051 Datasheet PDF Download

Part Number 2N6051
Description (2N6051 / 2N6052) PNP DARLINGTON POWER SILICON TRANSISTOR
Manufacture Micrel Semiconductor
Total Page 2 Pages
PDF Download Download 2N6051 Datasheet PDF

Features: TECHNICAL DATA PNP DARLINGTON POWER SILI CON TRANSISTOR Qualified per MIL-PRF-19 500/501 Devices www.DataSheet4U.com Qu alified Level 2N6052 JAN JANTX JANTXV 2N6051 MAXIMUM RATINGS Ratings Collect or-Emitter Voltage Collector-Base Volta ge Emitter-Base Voltage Base Current Co llector Current Total Power Dissipation (1) Symbol VCEO VCBO VEBO IB IC PT Top , Tstg Symbol RθJC 2N6051 80 80 2N60 52 100 100 Unit Vdc Vdc Vdc Adc Adc W W 0 @ TC = +250C @ TC = +1000C Operati ng & Storage Junction Temperature Range 5.0 0.2 12 150 75 -55 to +175 Max. 1. 0 C THERMAL CHARACTERISTICS Character istics Thermal Resistance, Junction-to- Case Unit 0 C/W TO-3* (TO-204AA) *See appendix A for package outline 1) Dera te linearly at 1.0 W/0C above TC > +250 C ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristic s Symbol Min. Max. Unit OFF CHARACTERI STICS Collector-Emitter Breakdown Volta ge IC = 100 mAdc Collector-Emitter Cuto ff Current VCE = 40 Vdc VCE = 50 Vdc Collector-Emitter Cutoff Cu.

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TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/501
Devices
www.DataSheet4U.com
2N6051
2N6052
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation(1)
@ TC = +250C
@ TC = +1000C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly at 1.0 W/0C above TC > +250C
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
Top, Tstg
Symbol
RθJC
2N6051 2N6052
80 100
80 100
5.0
0.2
12
150
75
-55 to +175
Max.
1.0
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N6051
2N6052
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 40 Vdc
2N6051
ICEO
VCE = 50 Vdc
Collector-Emitter Cutoff Current
2N6052
VCE = 80 Vdc, VBE = 1.5 Vdc
2N6051
ICEX
VCE = 100 Vdc, VBE = 1.5 Vdc
Emitter-Base Cutoff Current
2N6052
VEB = 5.0 Vdc
IEBO
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Unit
0C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
Min. Max.
Unit
80 Vdc
100
1.0 mAdc
1.0
0.5 mAdc
0.5
2.0 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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