2SJ598 Datasheet: SWITCHING P-CHANNEL POWER MOS FET





2SJ598 SWITCHING P-CHANNEL POWER MOS FET Datasheet

Part Number 2SJ598
Description SWITCHING P-CHANNEL POWER MOS FET
Manufacture NEC
Total Page 8 Pages
PDF Download Download 2SJ598 Datasheet PDF

Features: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS F ET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed w ww.DataSheet4U.com ORDERING INFORMATIO N PART NUMBER 2SJ598 2SJ598-Z PACKAGE T O-251 (MP-3) TO-252 (MP-3Z) for soleno id, motor and lamp driver. FEATURES Low on-state resistance: RDS(on)1 = 1 30 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4 .0 V, ID = –6 A) • Low Ciss: Ciss = 720 pF TYP. • Built-in gate protecti on diode • TO-251/TO-252 package ABS OLUTE MAXIMUM RATINGS (TA = 25°C) Drai n to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Curre nt (DC) (TC = 25°C) Drain Current (pul se) Note1 (TO-251) –60 m20 m12 m30 2 3 1.0 150 –55 to +150 –12 14.4 V V A A W W °C °C A mJ (TO-252) VDSS VGS S ID(DC) ID(pulse) PT PT Tch Tstg IAS E AS Total Power Dissipation (TC = 25°C ) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy .

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ598
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ598 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
www.DataSheet4U.com
FEATURES
Low on-state resistance:
RDS(on)1 = 130 mMAX. (VGS = –10 V, ID = –6 A)
RDS(on)2 = 190 mMAX. (VGS = –4.0 V, ID = –6 A)
Low Ciss: Ciss = 720 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ598
TO-251 (MP-3)
2SJ598-Z
TO-252 (MP-3Z)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
VGSS
ID(DC)
ID(pulse)
PT
m20
m12
m30
23
Total Power Dissipation (TA = 25°C)
PT 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150
IAS –12
EAS 14.4
V
V
A
A
W
W
°C
°C
A
mJ
(TO-251)
(TO-252)
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 , VGS = –20 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14656EJ4V0DS00 (4th edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2000, 2001

                    
  






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