MOS FIELD EFFECT TRANSISTOR
P-CHANNEL POWER MOS FET
The 2SJ598 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
â€¢ Low on-state resistance:
RDS(on)1 = 130 mâ„¦ MAX. (VGS = â€“10 V, ID = â€“6 A)
RDS(on)2 = 190 mâ„¦ MAX. (VGS = â€“4.0 V, ID = â€“6 A)
â€¢ Low Ciss: Ciss = 720 pF TYP.
â€¢ Built-in gate protection diode
â€¢ TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25Â°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25Â°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25Â°C)
Total Power Dissipation (TA = 25Â°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg â€“55 to +150
Notes 1. PW â‰¤ 10 Âµs, Duty Cycle â‰¤ 1%
2. Starting Tch = 25Â°C, VDD = â€“30 V, RG = 25 â„¦, VGS = â€“20 â†’ 0 V
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Document No. D14656EJ4V0DS00 (4th edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.