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HY27US561M

Hynix Semiconductor

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx...


Hynix Semiconductor

HY27US561M

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Description
HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. 0.0 0.1 Initial Draft Renewal Product Group History Draft Date Jul. 10. 2003 Dec. 08. 2003 Dec. 08. 2003 Remark Preliminary Preliminary Preliminary 0.2 Append 1.8V Operation Product to Data sheet www.DataSheet4U.com Insert Spare Enable function for GND Pin(#6) - In case of Reading or Programming, GND Pin(#6) should be Low or High. - Change the test condition of Stand-by current-Refer to Table 13. Change CSP Package name & thickness - Name : VFBGA -> FBGA - Thickness : 1.0mm(max) -> 1.2mm(max) 1) Delete Cache Program Mode 2) Modify the description of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled(Enabled) (Page23) 1) change FBGA dimension : Thickness : 1.2mm(max) -> 1.0mm(max) 2) Edit Fig.33 read operation with CE don't care 1) Change TSOP1,WSOP1,FBGA package dimension 0.6 - Change TSOP1,WSOP1,FBGA mechanical data - Inches parameter has been excluded from the mechanical data table 1) Change TSOP1, WSOP1, FBGA package dimension 2) Edit TSOP1, WSOP1 package figures 3) Change FBGA package figure 0.3 Mar. 08. 2004 Preliminary 0.4 Jun. 01. 2004 Preliminary 0.5 Sep. 24. 2004 Preliminary Oct. 18. 2004 Preliminary 0.7 Oct. 20. 2004 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibili...




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